Journal ArticleDOI
Quantum-confined photoluminescence from Ge(1-x)Sn(x)/Ge superlattices on Ge-buffered Si(001) substrates.
TLDR
The first observation of room-temperature quantum-confined photoluminescence from low-dimensional Ge(1-x)Sn(x)/Ge superlattices (SLs) up to a high Sn content is reported, suggesting that Sn-based low- dimensional structures are promising material for efficient Si-based lasers.Abstract:
We report the first observation of room-temperature quantum-confined photoluminescence (PL) from low-dimensional Ge1−xSnx/Ge superlattices (SLs) up to a high Sn content of 6.96%. Both direct and indirect emissions associated with the interband transitions between minibands in the conduction bands and valence band were observed at room temperature. As the Sn content is increased, the energy difference between the lowest direct and indirect transitions is reduced, indicating an effective modification of the band structure desired for optoelectronics. The integrated PL intensity ratio of direct to indirect recombinations is significantly enhanced with increasing Sn content due to the reduced Γ-L energy separation and quantum confinement effect. Those results suggest that Sn-based low-dimensional structures are promising material for efficient Si-based lasers.read more
Citations
More filters
Journal ArticleDOI
GeSn p-i-n waveguide photodetectors on silicon substrates
TL;DR: In this article, the authors reported an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer and showed that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency.
Journal ArticleDOI
Design and Modeling of GeSn-Based Heterojunction Phototransistors for Communication Applications
TL;DR: In this paper, the authors proposed the use of Ge $1-x}$ Sn $_x$ heterojunction phototransistors (HPTs) as efficient optical receivers on Si substrates and analyzed their performance.
Journal ArticleDOI
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer.
TL;DR: Band structure analysis of the pseudomorphic GeSn/Ge quantum well structures indicated that, despite the stronger quantum confinement, the absorption edge can be shifted to longer wavelengths by increasing the Sn content, thereby enabling efficient photodetection in the infrared region.
Journal ArticleDOI
Electrically Injected GeSn Vertical-Cavity Surface Emitters on Silicon-on-Insulator Platforms
Bo-Jun Huang,Chen-Yang Chang,Yun-Da Hsieh,Richard A. Soref,Greg Sun,H. H. Cheng,Guo-En Chang +6 more
TL;DR: In this paper, a vertical cavity employing a buried oxide layer and a deposited SiO2 top layer as reflectors is developed for enhancing the electroluminescence in the group-IV active layer.
Journal ArticleDOI
Structural and optical characteristics of Ge_1-xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers
TL;DR: In this article, a series of strained-layer Ge1−xSnx/Ge superlattices with various Sn contents up to a threshold value that affords a direct bandgap is achieved by the technique of low temperature growth using molecular beam epitaxy.
References
More filters
Journal ArticleDOI
High-quality Ge epilayers on Si with low threading-dislocation densities
Hsin-Chiao Luan,Desmond R. Lim,Kevin K. Lee,Kevin M. Chen,Jessica G. Sandland,Kazumi Wada,Lionel C. Kimerling +6 more
TL;DR: In this paper, a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing was proposed for making high-quality epilayers on Si.
Journal ArticleDOI
Interband Transitions in Sn x Ge 1-x Alloys
Gang He,Harry A. Atwater +1 more
TL;DR: Optical absorption measurements for diamond cubic cubic alloy films indicate strong interband transitions with a change in direct energy gap of $0.35l{E}_{g}l0.80\mathrm{eV}$ for $ 0.15gxg0$.
Journal ArticleDOI
Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study
V. R. D'Costa,Candi S. Cook,A. G. Birdwell,Chris L. Littler,Michael Canonico,Stefan Zollner,John Kouvetakis,Jose Menendez +7 more
TL;DR: In this paper, a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties was found for the optical transitions in the alloys, which is not predicted by electronic structure calculations within the virtual crystal approximation.
Journal ArticleDOI
Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
Lorenzo Colace,Gianlorenzo Masini,F. Galluzzi,Gaetano Assanto,Giovanni Capellini,L. Di Gaspare,Elia Palange,Florestano Evangelisti +7 more
TL;DR: In this paper, a metal-semiconductor-metal photodetector based on relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer, was presented.
Journal ArticleDOI
Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
TL;DR: In this paper, the authors synthesize up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy.