Journal ArticleDOI
Reactive sputtering of gallium nitride thin films for GaAs MIS structures
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TLDR
In this paper, the surface state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, were derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively.Abstract:
Amorphous gallium nitride was deposited onto various substrates by reactive sputtering of gallium in nitrogen ambient. Higher pressure up to 2×10−1 Torr is effective in making films closer to the stoichiometric composition. Annealing at 350 °C improves the insulating property of as‐deposited films by decreasing dc and ac conductance. The surface‐state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, was derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively. This surface‐state density is much lower than that for the native oxide.read more
Citations
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Progress and prospects of group-III nitride semiconductors
S.N Mohammad,Hadis Morkoç +1 more
TL;DR: In this paper, the authors review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them, focusing on the current status of wide bandgap gallium nitride, and related semiconductors from both the materials and devices points of view.
Journal ArticleDOI
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
Robert F. Davis,Zlatko Sitar,B.E. Williams,H. S. Kong,H. J. Kim,John W. Palmour,John A. Edmond,J. Ryu,Jeffrey T. Glass,C. H. Carter +9 more
TL;DR: In this paper, it was shown that monocrystalline diamond and silicon carbide can be achieved at or below 1 atm total pressure and at a temperature T, which is the highest operating temperature ever achieved for a field effect device.
Journal ArticleDOI
Aggregation phenomena and fractal aggregates
TL;DR: In this paper, the authors reviewed recent work to understand aggregation phenomena and the structure of fractal aggregates and introduced the concept of the fractal and theoretical models capable of building fractal clusters with particular emphasis on diffusion-limited aggregation.
Journal ArticleDOI
Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
TL;DR: In this paper, the growth of GaN films by the electron cyclotron resonance microwave plasma assisted molecular beam epitaxy (ECR•MBE) method on the R plane of sapphire was investigated.
Journal ArticleDOI
Blue luminescence from amorphous GaN nanoparticles synthesized in situ in a polymer
Yang Yang,Valerie J. Leppert,Subhash H. Risbud,Brendan Twamley,Phillip P. Power,Howard W. H. Lee +5 more
TL;DR: Amorphous GaN nanoparticles were synthesized by the in situ thermal decomposition of cyclotrigallazane incorporated into a polystyrene-poly(N,N-dimethyl-4-vinylaniline) copolymer.
References
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Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
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Frequency dependence of the impedance of distributed surface states in mos structures
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Luminescent properties of GaN
TL;DR: In this article, a photoluminescent peak was obtained at 3.477 eV; its temperature dependence was reported, and a doublet was observed in 3.37 eV.
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Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements
TL;DR: In this article, the effect of surface rearrangement on the valence-band electronic structure of GaAs is discussed. But, the authors focus on the last two molecular layers of the GaAs crystal.
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Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
T. Sawada,H. Hasegawa +1 more
TL;DR: The capacitance/voltage characteristics of the metal-oxide-semiconductor system formed on n-type GaAs by anodic oxidation differ greatly from those of p-type GAAs, showing an anomalous frequency dispersion which is not caused by the Quast carrier diffusion mechanism, but by anomalous formation of interface states as discussed by the authors.