Journal ArticleDOI
Room-temperature single-electron memory
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TLDR
In this article, the authors presented room-temperature operation for the first time of single-electron memory, in which one electron represents one bit of information, made possible by their new one-transistor memory configuration which has a very high charge sensitivity (conventionally, three circuit elements are needed).Abstract:
This paper presents room-temperature operation, for the first time, of single-electron memory, in which one electron represents one bit of information. This is made possible by our new one-transistor memory configuration which has a very high charge sensitivity (conventionally, three circuit elements are needed). Another new technique, which facilitates single-electron memory, is the ultra-thin (3.4 nm) poly-Si film used for the active region, in which sub-10-nm-width current channels and storage dots are naturally formed. In the fabricated poly-Si TFT's a single electron is stored (or "written") on a low-energy silicon island, and the number of stored electrons is counted (or "read") by the quantized threshold-voltage shift. Single-electron memory provides the potential for new nonvolatile RAM's, suitable for mobile computers/communicators. >read more
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Single-electron devices and their applications
TL;DR: In this paper, the basic physics of single-electron devices, as well as their current and prospective applications are reviewed, and some byproduct ideas which may revolutionize random access memory and digital-data-storage technologies are presented.
Journal ArticleDOI
High-Mobility Nanotube Transistor Memory
TL;DR: In this article, a single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature, which can be reversibly written, read, and erased at temperatures up to 100 K.
Journal ArticleDOI
A silicon single-electron transistor memory operating at room temperature
TL;DR: A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature and should be compatible with future ultralarge-scale integrated circuits.
Nanoscale CMOS
TL;DR: This paper examines the apparent limits, possible extensions, and applications of CMOS technology in the nanometer regime from the point of view of device physics, device technology, and power consumption and speculate on the future ofCMOS for the coming 15-20 years.
Journal ArticleDOI
Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
Go Yusa,Hiroyuki Sakaki +1 more
TL;DR: In this article, the trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures.
References
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Journal ArticleDOI
Percolation and Conduction
TL;DR: In this article, an extension of percolation theory to treat transport is described, and a general expression for the conductance of such networks is derived, which relates to the spin-stiffness coefficient of dilute ferromagnet.
Journal ArticleDOI
Observation of single-electron charging effects in small tunnel junctions.
T. A. Fulton,G. J. Dolan +1 more
TL;DR: Unusual structure and large electric-field--induced oscillations have been observed in the current-voltage curves of small-area tunnel junctions arranged in a low-capacitance multiple-junction configuration.
Journal ArticleDOI
Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
M J Kirton,M J Uren +1 more
TL;DR: In very small electronic devices, the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance, referred to as a random telegraph signal (RTS) as mentioned in this paper.
Journal ArticleDOI
Frequency-locked turnstile device for single electrons
L.J. Geerligs,V.F. Anderegg,P.A.M. Holweg,J.E. Mooij,Hugues Pothier,Daniel Esteve,Cristian Urbina,Michel Devoret +7 more
TL;DR: In this paper, an array of ultrasmall tunnel junctions which acts like a turnstile for single electrons was fabricated, and when alternating voltage of frequency f is applied to a gate, one electron is transferred per cycle through the device.
Journal ArticleDOI
Single-electron charging and periodic conductance resonances in GaAs nanostructures.
TL;DR: In this paper, the authors measured the conductance of GaAs and found that periodic oscillations correspond to the sequential addition of single electrons to the segment of the channel between the barriers.