Journal ArticleDOI
Scaling Study on High-Current Density Low-Dispersion GaN Vertical FinFETs
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TLDR
In this paper , a GaN vertical FinFET was fabricated with various fin widths and 400 ns pulsed I-V measurements were performed to investigate their self-heating and DC-RF dispersion.Abstract:
GaN vertical FinFETs on a bulk GaN substrate were fabricated with various fin widths and 400 ns pulsed I-V measurements were performed to investigate their self-heating and DC-RF dispersion. With low-temperature post-gate processes including Ar plasma-enhanced Ohmic contact, a high drain current density ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$>$ </tex-math></inline-formula> 175 kA cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{2}}$ </tex-math></inline-formula> ) and a low gate leakage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$< 1\times 10^{-{17}}$ </tex-math></inline-formula> kA cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{2}}$ </tex-math></inline-formula> ) could be achieved simultaneously. When normalized by the active fin area, the specific on-resistance was 0.030 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula> cm2 at the drain on-current of 119 kA cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{2}}$ </tex-math></inline-formula> for the 300 mm fin-width single-finger device. A 25-finger device with the same fin width and fin-to-fin pitch of 3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> showed the on-resistance of 0.043 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula> cm2 (0.43 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula> cm2 when normalized by the total device area of 6000 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}^{{2}}$ </tex-math></inline-formula> ), which was one of the lowest values reported. Low DC-RF dispersion was observed for the devices more than 2.5 mm away from the wafer edge. This study also reports that more influence of self-heating was observed as the fin width scaled down or the number of fingers increased. read more
References
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Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
Journal ArticleDOI
High Breakdown ( $> \hbox{1500\ V}$ ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Bin Lu,Tomas Palacios +1 more
TL;DR: In this article, the authors present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates.
Journal ArticleDOI
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
Journal ArticleDOI
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
TL;DR: In this article, a current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device.
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Micro-LEDs, a Manufacturability Perspective
TL;DR: In this article, the authors review the recent technological developments of micro-LEDs from various aspects, including efficient and reliable assembly of individual LED dies into addressable arrays, full-color schemes, defect and yield management, repair technology and cost control.