Journal ArticleDOI
Secondary emission studies of hot carrier relaxation in polar semiconductors
J.A. Kash,J.C. Tsang +1 more
TLDR
In this paper, the initial relaxation of optically injected hot carriers in polar semiconductors is studied by Raman scattering from nonequilibrium LO phonons and anti-Stokes hot luminescence.Abstract:
The details of the initial relaxation of optically injected hot carriers in polar semiconductors are studied by Raman scattering from nonequilibrium LO phonons and anti-Stokes hot luminescence. Experiments on intrinsic and doped GaAs reveal carrier-phonon and carrier-carrier interaction times, the wavevector dependence of the hot phonon distribution, and the influence of holes on the LO phonon lifetime. Studies in AlxGa1−xAs probe the influence of alloy disorder on the generation of hot phonons. In addition, because there are two optic phonon modes in AlxGa1−xAs, we can experimentally measure the effect of ionicity (the frequency difference between LO and TO phonons) on the generation rate for the hot phonons.read more
Citations
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Journal ArticleDOI
Simulation of carrier transport and nonlinearities in quantum-well laser diodes
M. Grupen,Karl Hess +1 more
TL;DR: The two-dimensional (2D) quantum-well (QW) laser diode simulator Minilase-II is presented in detail in this paper, which contains a complete treatment of carrier dynamics including bulk transport, quantum carrier capture, spectral hole burning, and quantum carrier heating.
Journal ArticleDOI
Hot electrons in low-dimensional structures
TL;DR: The properties of hot electrons in systems where electrons and phonons experience quantum confinement are reviewed in this paper, particularly with reference to the principal scattering mechanism, and the experimental and theoretical data relating to this form a large part of the review.
Journal ArticleDOI
Theory of coherent phonon oscillations in semiconductors.
TL;DR: In this paper, the frequency of the oscillations in transmission or reflection always matches one of the optical phonon modes, which indicates that the phonon mode becomes coherently excited.
Journal ArticleDOI
Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density
TL;DR: In this article, the authors measured the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 1016to2×1019cm−3 and found that the lifetime decreases from 25ps at low density to 035ps at the highest density.
Journal ArticleDOI
Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations
TL;DR: In this article, the thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics and the harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory calculations.
References
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Journal ArticleDOI
Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
P. Parayanthal,Fred H. Pollak +1 more
TL;DR: Using a spatial correlation model with a Gaussian correlation function, the authors quantitatively explained the broadening and asymmetry of the first-order longitudinal-optic phonon Raman spectrum induced by alloy potential fluctuations.
Journal ArticleDOI
Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAs
TL;DR: Time-dependent spontaneous Raman spectra of optically pumped GaAs have been measured with subpicosecond time resolution and substantial time-dependent changes are observed in the spectra which result from screening of the LO phonons by the free carriers and the relaxation of thefree carriers to the band edges.
Journal ArticleDOI
Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution
TL;DR: In this article, a novel technique for time-resolved Raman scattering for studying the dynamics of nonequilibrium excitations on a picosecond time scale is described, and the generation and the decay of nonthermal LO phonons in GaAs are measured.
Journal ArticleDOI
Subpicosecond spectral hole burning due to nonthermalized photoexcited carriers in GaAs.
TL;DR: Subpicosecond infrared pulses were used to study in GaAs the spectral dependence of the absorption saturation around the excitation-pulse wavelength and a line-shape analysis allows the determination of the electron-hole-pair dephasing time.
Journal ArticleDOI
Direct subpicosecond measurement of carrier mobility of photoexcited electrons in gallium arsenide.
TL;DR: The mobility of hot electrons in gallium arsenide has been measured with subpicosecond time resolution, following injection by 2-eV femtosecond pulses as mentioned in this paper.