Self-formed grain boundary healing layer for highly efficient CH 3 NH 3 PbI 3 perovskite solar cells

TLDR: In this article, the grain boundaries in thin-film perovskite solar cells are passedivated by using excess CH3NH3I in the precursor solution, achieving an average power conversion efficiency of 20.1% over 50 cells (best cell at 20.4%).

Abstract: Perovskite solar cells have attracted significant research efforts due to their remarkable performance, with certified power conversion efficiency now reaching 22%. Solution-processed perovskite thin films are polycrystalline, and grain boundaries are thought to be responsible for causing recombination and trapping of charge carriers. Here we report an effective and reproducible way of treating grain boundaries in CH3NH3PbI3 films deposited by means of a Lewis acid–base adduct approach. We show by high-resolution transmission electron microscopy lattice images that adding 6 mol% excess CH3NH3I to the precursor solution resulted in a CH3NH3I layer forming at the grain boundaries. This layer is responsible for suppressing non-radiative recombination and improving hole and electron extraction at the grain boundaries by forming highly ionic-conducting pathways. We report an average power conversion efficiency of 20.1% over 50 cells (best cell at 20.4%) together with significantly reduced current–voltage hysteresis achieved by this grain boundary healing process. The grain boundaries in thin-film perovskite solar cells are responsible for non-radiative carrier recombination, which is deleterious for the optoelectronic performance. Son et al. show how to passivate the grain boundaries by using excess CH3NH3I in the precursor solution, achieving efficiencies of 20.4%.