Journal ArticleDOI
Semimetal-to-semiconductor transition in bismuth thin films.
Craig A. Hoffman,Jerry R. Meyer,Filbert J. Bartoli,A. Di Venere,X. J. Yi,C. L. Hou,Heng Wang,John B Ketterson,George K. Wong +8 more
TLDR
In this paper, the minority electron concentration as a function of temperature in the range 100-300 K has been studied and confirmed the long-standing theoretical prediction that quantum confinement should convert Bi from a semimetal to a semiconductor at a critical thickness on the order of 300 \AA{}.Abstract:
Field- and temperature-dependent magnetotransport measurements on Bi layers grown by molecular-beam epitaxy have been analyzed by mixed-conduction techniques. In the thin-film limit, the net hole density scales inversely with layer thickness while the mobility scales linearly. By studying the minority electron concentration as a function of temperature in the range 100--300 K, we have unambiguously confirmed the long-standing theoretical prediction that quantum confinement should convert Bi from a semimetal to a semiconductor at a critical thickness on the order of 300 \AA{}.read more
Citations
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Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase
TL;DR: In this article, a gapless phase between the spin Hall and the insulator phases in 3D was investigated in inversion-asymmetric systems, and it was shown that the existence of such a phase stems from the topological nature of gapless points (diabolical points) in three dimensions, but not in 2D.
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Quantum spin Hall effect and enhanced magnetic response by spin-orbit coupling.
TL;DR: It is theoretically predicted that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the Z2 topological number.
Journal ArticleDOI
The surfaces of bismuth: Structural and electronic properties
TL;DR: In this paper, the effect of the spin-orbit interaction on low-index surfaces of the group V semimetal bismuth has been studied and the main focus is on the geometric and electronic structure.
Journal ArticleDOI
Few-layer Bismuthene: Sonochemical Exfoliation, Nonlinear Optics and Applications for Ultrafast Photonics with Enhanced Stability
Lu Lu,Zhiming Liang,Leiming Wu,Yunxiang Chen,Yufeng Song,Sathish Chander Dhanabalan,Joice Sophia Ponraj,Biqin Dong,Yuanjiang Xiang,Feng Xing,Dianyuan Fan,Han Zhang +11 more
Journal ArticleDOI
Anomalously high thermoelectric figure of merit in Bi1−xSbx nanowires by carrier pocket alignment
TL;DR: In this paper, a band structure phase diagram was generated, showing the dependence of the relative band edge positions on diameter and composition, and the thermoelectric figure-of-merit (ZT) was found for p-type nanowires at 77 K for dW∼40nm and x∼0.13.