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Journal ArticleDOI

Size Effects in Bi-Sb Solid Solutions Thin Films

TLDR
In this article, it was shown that the monotonic component of the σ(T) dependence can be satisfactorily approximated by theoretical calculations based on the classical Fuchs - Sondheimer theory.
Abstract
The room-temperature dependences of the electrical conductivity σ, Seebeck coefficient S, Hall coefficient RH, and the thermoelectric power factor P on the thickness (d=10–300 nm) of the thin films grown on mica substrates by thermal evaporation in vacuum of Bi-Sb solid solutions crystals with 4.5 at.% Sb were obtained. It was established that an increase in d up to ~ 200 nm leads to a change in kinetic coefficients and that in the thickness dependences of the thermoelectric properties, quantum oscillations were observed. It was shown that the monotonic component of the σ(T) dependence can be satisfactorily approximated by theoretical calculations based on the classical Fuchs - Sondheimer theory. The theoretically estimated period of oscillations is in a good agreement with the experimentally observed period.

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Citations
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Journal ArticleDOI

Prediction of Anisotropic Single-Dirac-Cones in Bi${}_{1-x}$Sb${}_{x}$ Thin Films

TL;DR: An iterative-two-dimensional- two-band model is developed to get a consistent inverse-effective-mass-tensor and band gap that can be used in a general two-dimensional system that has a nonparabolic dispersion relation as in the Bi(1-x)Sb(x) thin film system.
Journal ArticleDOI

Constructing Anisotropic Single-Dirac-Cones in Bi1–xSbx Thin Films

TL;DR: In this paper, an iterative two-dimensional-two-band model was developed to get a consistent inverse-effective-mass-tensor and band gap, which can be used in a general 2D system that has a nonparabolic dispersion relation as in the Bi1−Sbx thin film system.
Journal ArticleDOI

Constructing a large variety of Dirac-cone materials in the Bi1−xSbx thin film system

TL;DR: In this article, the authors theoretically predict that a large variety of Dirac-cone materials can be constructed in Bi1−xSbx thin films and show how to construct single-, bi-and tri-Dirac cone materials with various amounts of wave vector anisotropy.
Journal ArticleDOI

Phase diagrams of Bi 1-x Sb x thin films with different growth orientations

TL;DR: In this paper, a closed-form model was developed to evaluate the band edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket, and the symmetries and the band shifts of different carrier pockets were evaluated for Bi${}{1\ensuremath{-}x}$Sb${}_{x}) thin films that are grown along different crystalline axes.

Theoretical Study on the Band Structure of Bi 1−x Sb x Thin Films

Shuang Tang
TL;DR: Dresselhaus et al. as discussed by the authors developed the iterative two-dimensional-two-band model to study the twodimensional L-point non-parabolically dispersive electronic band structure of the Bi1−xSbx thin films system.
References
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BookDOI

CRC Handbook of Thermoelectrics

TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Journal ArticleDOI

The mean free path of electrons in metals

TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
Journal ArticleDOI

The conductivity of thin metallic films according to the electron theory of metals

TL;DR: In this paper, the conductivity of thin films of the alkali metals has been measured in the H. W. Wills Physical Laboratory, Bristol and the experimental results were compared with a formula derived on the basis of this hypothesis.
Journal ArticleDOI

Low-temperature Transport-properties of the Group-v Semimetals

TL;DR: In this paper, the electrical resistivity, thermal conductivity and thermopower of bismuth, antimony and arsenic are reviewed, with particular emphasis on measurements performed at low and ultralow temperatures.
Journal ArticleDOI

Electron and hole transport in bismuth

TL;DR: In this paper, measurements of the low field galvanomagnetic tensor components of bismuth from 77 to 300K were reported, and the eight magnetoresistivity coefficients /b A/sub ij/ were found to vary as /b T/ /sup -2 / up to nearly 120 K, then as/b T//sup -3.9/ from 120 to 300 K.
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