Journal ArticleDOI
Stable transistors in hydrogenated amorphous silicon
TLDR
In this article, the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented.Abstract:
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use of source-gated transistors should enable stable analog circuits to be made in amorphous silicon.read more
Citations
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Journal ArticleDOI
Extremely high-gain source-gated transistors.
TL;DR: The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor.
Journal ArticleDOI
Source-gated Transistors for Order-Of-Magnitude Performance Improvements in Thin-Film Digital Circuits
TL;DR: This work shows that simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs.
Journal ArticleDOI
Low-Field Behavior of Source-Gated Transistors
TL;DR: In this paper, a physical description of low-field behavior of a Schottky source-gated transistor (SGT) is outlined where carriers crossing the source barrier by thermionic emission are restricted by JFET action in the pinch-off region at the drain end of the source.
Journal ArticleDOI
Stability evaluation of ZnO nanosheet based source-gated transistors.
TL;DR: The present investigation experimentally demonstrates the potential advantages of SGTs over FETs as driver transistor for AMOLEDs display circuits which require very high stability in OLED driving current.
Journal ArticleDOI
Analysis of Schottky barrier source-gated transistors in a-Si:H
F. Balon,John M. Shannon +1 more
TL;DR: In this paper, the analysis of source-gated transistors in amorphous silicon having Schottky source barriers is presented, showing that the changes in current are well described by thermionic-field emission of electrons through the reverse biased barrier and the effect of the electric field induced by the gate.
References
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MonographDOI
Hydrogenated amorphous silicon
TL;DR: In this article, the electronic density of states of amorphous silicon and their electronic states have been investigated in terms of defect reactions, thermal equilibrium and metastability, as well as their electronic properties.
Journal ArticleDOI
Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors
C. van Berkel,M. J. Powell +1 more
TL;DR: In this article, bias stress measurements on amorphous silicon-silicon nitride ambipolar thin-film transistors give clear evidence for the coexistence of two distinct instability mechanisms: the metastable creation of states in the a−Si:H layer and charge trapping in a•SiN:Hlayer.
Journal ArticleDOI
Source-gated thin-film transistors
John M. Shannon,Ed Gerstner +1 more
TL;DR: In this article, the authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor, which can operate at lower voltages with larger gains and lower power dissipation.
Journal ArticleDOI
Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon
TL;DR: In this paper, the authors present a microscopic model for metastable Si dangling-bond defect creation in hydrogenated amorphous silicon, which is applicable to both light-induced defect creating in solar cells (Staebler-Wronski effect) and bias-stress induced defect creation of thin-film transistors.
Journal ArticleDOI
Source-gated transistors in hydrogenated amorphous silicon
TL;DR: In this paper, a model describing the characteristics of a source-gated transistor is outlined and compared with characteristics measured on transistors made using hydrogenated amorphous silicon, and it is shown that the saturation voltage of the SGT can be very much smaller than it is in a FET leading to lower voltage operation and power dissipation.