Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
Kazuya Konishi,Shigehisa Yamamoto,Shuhei Nakata,Yu Nakamura,Yosuke Nakanishi,Takanori Tanaka,Yoichiro Mitani,Nobuyuki Tomita,Yoshihiko Toyoda,Satoshi Yamakawa +9 more
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TLDR
In this paper, the authors evaluate the stacking faults (SFs) expansion from basal plane dislocations (BPDs) converted into threading edge dislocation (TEDs) under the current stress to the pn devices and analyze the nucleation site of the SF by combined polishing, chemical etching in molten KOH, photoluminescence imaging, focus ion beam, transmission electron microscopy, and Time-of-Flight secondary ion mass spectrometer techniques.Abstract:
We evaluate the stacking faults (SFs) expansion from basal plane dislocations (BPDs) converted into threading edge dislocations (TEDs) under the current stress to the pn devices and analyzed the nucleation site of the SF by combined polishing, chemical etching in molten KOH, photoluminescence imaging, Focus ion beam, transmission electron microscopy, and Time-of-Flight secondary ion mass spectrometer techniques. It was found that the formation of SFs occurs upon the current stress levels of 400 A/cm2 where the diode area is not including BPDs in the drift layer after the high current stress, and the high current stress increases the SFs expansion density. It was also found the dependence of the junction temperature. The estimated activation energy for the expansion of SFs is Ea = 0.46 eV. The SF extends from the conversion point of the BPD into the TED within buffer layer. Even though BPDs converted into TEDs within the high doped buffer layer, SFs expand under high current stress.read more
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Defect engineering in SiC technology for high-voltage power devices
Tsunenobu Kimoto,Heiji Watanabe +1 more
Journal ArticleDOI
Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
Takeshi Tawara,Tetsuya Miyazawa,Mina Ryo,Masaki Miyazato,Takumi Fujimoto,Kensuke Takenaka,Shinichiro Matsunaga,Masaaki Miyajima,Akihiro Otsuki,Yoshiyuki Yonezawa,Tomohisa Kato,Hajime Okumura,T. Kimoto,Hidekazu Tsuchida +13 more
TL;DR: In this article, the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers was investigated.
Journal ArticleDOI
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
Takeshi Tawara,Shinichiro Matsunaga,Takumi Fujimoto,Mina Ryo,Masaki Miyazato,Tetsuya Miyazawa,Kensuke Takenaka,Masaaki Miyajima,Akihiro Otsuki,Yoshiyuki Yonezawa,Tomohisa Kato,Hajime Okumura,Tsunenobu Kimoto,Hidekazu Tsuchida +13 more
TL;DR: In this article, the authors investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations.
Journal ArticleDOI
Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes
Shohei Hayashi,T. Yamashita,T. Yamashita,Junji Senzaki,Masaki Miyazato,Mina Ryo,Masaaki Miyajima,Tomohisa Kato,Yoshiyuki Yonezawa,Kazutoshi Kojima,Hajime Okumura +10 more
TL;DR: In this article, the origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test.
Journal ArticleDOI
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes
Aoi Okada,Johji Nishio,Ryosuke Iijima,Chiharu Ota,Akihiro Goryu,Masaki Miyazato,Mina Ryo,Takashi Shinohe,Masaaki Miyajima,Tomohisa Kato,Yoshiyuki Yonezawa,Hajime Okumura +11 more
TL;DR: In this paper, the authors investigated the dependences of both triangle-and bar-shaped SSFs on the injection current density at four temperature levels and found that the expansion of SSFs at a high current density was converted to contraction at a certain value as the current decreased and that the value is temperature-dependent.
References
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Journal ArticleDOI
Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
TL;DR: In this article, X-ray topography using synchrotron radiation was used to observe screw dislocation, threading edge dislocation and basal plane dislocation in 4H-SiC substrates and epitaxial layers.