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Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures

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TLDR
Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented and distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels were demonstrated over the entire temperature range.
Abstract
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.

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Citations
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Quantum-Dot Semiconductor Optical Amplifiers

TL;DR: This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters and suggests a potential for low-cost realization of regenerative transmission systems.
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Large linewidth reduction in semiconductor lasers based on atom-like gain material

TL;DR: In this article, the spectral and power characteristics of a single-mode InAs/AlGaInAs/InP QD distributed feedback laser operating at 1.5μm were described.
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1.5-mm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices

TL;DR: In this article, a bottom-up approach of strain-driven, self-organized epitaxial quantum dot growth was proposed to produce nanoscale species on very large surfaces and interface areas, resulting in the accumulation of a large defect density within the active region and the domination of nonradiative carrier recombination mechanisms.
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Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range

TL;DR: In this paper, the growth and characterization of self-assembled InxGa1−xAs quantum dots grown on GaAs (1 0 0 0 ) substrate designed to emit at 10 30
References
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Journal ArticleDOI

Temperature dependence of the exciton homogeneous linewidth in In 0.60 Ga 0.40 As/GaAs self-assembled quantum dots

TL;DR: In this article, the homogeneous linewidth of ground-state excitonic quantum dots as a function of temperature T was studied in high-resolution experiments at 2 K and 60 K.
Journal ArticleDOI

Quantum-Dot Semiconductor Optical Amplifiers

TL;DR: In this article, a quantum-dot semiconductor optical amplifier with a gain of 25 dB, noise figure of 20 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm was realized by using quantum dots.

Quantum-Dot Semiconductor Optical Amplifiers

TL;DR: This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters and suggests a potential for low-cost realization of regenerative transmission systems.
Journal ArticleDOI

Theory of pulse-train amplification without patterning effects in quantum-dot semiconductor optical amplifiers

TL;DR: In this paper, a theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical amplifiers (SOAs) is developed, and the maximum bit rate at which a data stream of pulses can be amplified without significant patterning effects is investigated.
Journal ArticleDOI

InP based lasers and optical amplifiers with wire-/dot-like active regions

TL;DR: In this paper, a brief overview of the current status and recent results of quantum-dash lasers are reported, including topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.
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