Journal ArticleDOI
Strong blue emission from As doped GaN grown by molecular beam epitaxy
TLDR
In this article, the authors studied the effect of the As2 flux on room temperature photoluminescence of a cubic GaN grown by molecular beam epitaxy and showed that the intensity of the blue and the cubic band edge emissions have a power law dependence on the As 2 flux.Abstract:
Arsenic doped GaN grown by molecular beam epitaxy has been studied by room temperature photoluminescence. In addition to the wurzite band edge transition, luminescence from the cubic phase and very strong blue emission at ∼2.6 eV are observed. The intensities of the blue and the cubic band edge emissions have a power law dependence on the As2 flux. The formation of the cubic phase has been explained by the initial formation of GaAs before substitution of the As by the more reactive N. The intensity of the blue emission at room temperature of the As doped samples is more than an order of magnitude stronger than the band edge emission in undoped samples.read more
Citations
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Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
Journal ArticleDOI
The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
TL;DR: In this article, the growth and properties of GaN:As layers prepared by molecular beam epitaxy, using a plasma source for active nitrogen, were studied and it was shown that arsenic doping during growth produces films showing blue emission at room temperature.
Journal ArticleDOI
Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
Robert Kudrawiec,Detlef Hommel +1 more
TL;DR: In this paper, a comprehensive review of this activity is presented, including an up-to-date compilation of material parameters for wurtzite boron nitride; its alloying with other III-nitrides, including structural and optical characterization; the band anticrossing model for III-nodes diluted with group V atoms; their synthesis and structural and Optical characterization; and examples of applications of 3-nide alloys containing Boron and group V atom in semiconductor devices.
Journal ArticleDOI
A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride
TL;DR: In this article, the influence of the growth conditions on the intensity of blue emission at room temperature from As-doped GaN samples grown by molecular beam epitaxy was investigated, and it was shown that the blue emission increases monotonically with the nitrogen flux and is most intense in the layers grown under the most nitrogen-rich conditions.
Journal ArticleDOI
Bright Blue Photo‐ and Electroluminescence from Eu2+‐Doped GaN/SiO2 Nanocomposites
Venkataramanan Mahalingam,Mingqian Tan,Prabhakaran Munusamy,J. B. Gilroy,Mati Raudsepp,F.C.J.M. van Veggel +5 more
TL;DR: In this paper, the authors demonstrate the synthesis of Eu 2+ -doped GaN/SiO 2 nanocomposites using a simple solid state reaction and their use in light-emitting devices.
References
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Journal ArticleDOI
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
TL;DR: In this paper, the optical properties of dilute GaAS1-xNx alloys have been reported and the authors assign the photoluminescence to band-edge transitions and not to isolated N-N pair emission.
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Photoluminescence of ion‐implanted GaN
TL;DR: In this article, the photoluminescence spectra were measured and compared to those of an unimplanted control sample, and thirty-five elements were implanted in GaN.
Journal ArticleDOI
Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
TL;DR: In this paper, the growth of GaN with a zinc-blende, wurtzite, or a mixed phase structure on GaP and GaAs substrates by a low-temperature modified molecular beam epitaxy technique was reported.
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Deep electronic gap levels induced by isovalent P and As impurities in GaN
T. Mattila,Alex Zunger +1 more
TL;DR: In this article, the electronic and atomic structure of isovalent substitutional P and As impurities in GaN was studied theoretically using a self-consistent plane-wave pseudopotential method.
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The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
TL;DR: In this paper, the authors reported the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD) and reported a characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the GaN:As films.