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Journal ArticleDOI

Structural analysis of indium sulphide thin films elaborated by chemical bath deposition

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TLDR
X-ray diffraction and scanning electron microscopy showed that the crystalline state of indium sulphide thin films, elaborated by chemical bath deposition technique on various substrates, is strongly affected by deposition parameters (deposition time tD, pH solution and thioacetamide concentration), as well as by annealing treatment.
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This article is published in Thin Solid Films.The article was published on 2005-02-14. It has received 58 citations till now. The article focuses on the topics: Chemical bath deposition & Combustion chemical vapor deposition.

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Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

TL;DR: In this article, a review is presented on the status of synthesizing thin films of metal chalcogenide and metal oxides by CBD and SILAR, and properties and applications of the thin films are also summarized.
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Highly efficient semitransparent CsPbIBr2 perovskite solar cells via low-temperature processed In2S3 as electron-transport-layer

TL;DR: In this paper, a low-temperature chemical bath deposition (CBD) method with different time to prepare In2S3 films as the ETL of Inorganic perovskite solar cells (IPSCs) was proposed.
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Effect of copper doping on physical properties of nanocrystallized SnS zinc blend thin films grown by chemical bath deposition

TL;DR: In this paper, the structure, surface morphology and optical properties of the SnS:Cu films were studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer measurements, respectively.
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Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

TL;DR: In this paper, the effect of thermal annealing on the physical properties of In2S3 thin films for eco-friendly buffer layer photovoltaic applications is reported.
Journal ArticleDOI

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

TL;DR: In2S3 thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5 as mentioned in this paper.
References
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Journal ArticleDOI

Chemical bath deposition of indium sulphide thin films: preparation and characterization

TL;DR: In this paper, a deposition mechanism of In2S3 thin films from thioacetamide deposition bath has been proposed, and the results showed that the as-deposited films were photoactive as evidenced by TRMC studies.
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Growth of In2S3 thin films by atomic layer epitaxy

TL;DR: In this paper, a polycrystalline β-In2S3 having a band gap of 2.3 eV was deposited by ALE using InCl3 and H2S as precursors.
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Characterization of spray pyrolysed indium sulfide thin films

TL;DR: In this paper, the In/S ratio of 1.2/8 was found to be very suitable for any photovoltaic application, in terms of crystallinity, bandgap and photoresponse.
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Novel precursors for the growth of α-In2S3: trisdialkyldithiocarbamates of indium

TL;DR: In this paper, thin films of cubic α-In 2 S 3 have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S 2 CNMeR) 3 [where R= n -Butyl (compound ( 1 )), n -Hexyl ( compound ( 2 ))].
Journal ArticleDOI

Structure, surface composition, and electronic properties of β-In2S3 and β-In2−xAlxS3

TL;DR: In this article, the effect of the nature of the substrate, of its surface morphology, of the introduction of small amounts of Al in the layer, on the properties of the films was specified.
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