Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates
Alexander Y. Polyakov,V. I. Nikolaev,A.I. Pechnikov,Sergey Stepanov,Eugene B. Yakimov,M. P. Scheglov,A. A. Vasilev,A. I. Kochkova,A. V. Chernykh,A.V. Chikiryaka,Stephen J. Pearton +10 more
TLDR
In this article , Halide Vapor Phase Epitaxy (HVPE) was used to grow very thick κ-Ga2O3 on GaN/sapphire templates.Abstract:
Thick (23 µm) films of κ-Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on GaN/sapphire templates at 630 °C. X-ray analysis confirmed the formation of single-phase κ-Ga2O3 with half-widths of the high-resolution x-ray diffraction (004), (006), and (008) symmetric reflections of 4.5 arc min and asymmetric (027) reflection of 14 arc min. Orthorhombic κ-Ga2O3 polymorph formation was confirmed from analysis of the Kikuchi diffraction pattern in electron backscattering diffraction. Secondary electron imaging indicated a reasonably flat surface morphology with a few (area density ∼103 cm−2) approximately circular (diameter ∼50–100 µm) uncoalesced regions, containing κ-Ga2O3 columns with in-plane dimensions and a height of about 10 µm. Micro-cathodoluminescence (MCL) spectra showed a wide 2–3.5 eV band that could be deconvoluted into narrower bands peaked at 2.59, 2.66, 2.86, and 3.12 eV. Ni Schottky diodes prepared on the films showed good rectification but a high series resistance. The films had a thin near-surface region dominated by Ec − 0.7 eV deep centers and a deeper region (∼2 µm from the surface) dominated by shallow donors with concentrations of ≤1016 cm−3. Photocurrent and photocapacitance spectra showed the presence of deep compensating acceptors with optical ionization energies of ∼1.35 and 2.3 eV, the latter being close to the energy of one of the MCL bands. Deep level transient spectroscopy revealed deep traps with energies near 0.3, 0.6, 0.7, 0.8, and 1 eV from the conduction band edge. The results show the potential of HVPE to grow very thick κ-Ga2O3 on GaN/sapphire templates.read more
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Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface
TL;DR: In this article , the emergence of p-type conductivity at the κ-Ga2O3/AlN interface was observed and interpreted, which indicated a layer of two-dimensional holes can form at this interface.
Journal ArticleDOI
HVPE Growth and Characterization of Thick κ-Ga2O3 Layers on GaN/Sapphire Templates
Sergey Stepanov,V. I. Nikolaev,Alexander Y. Polyakov,A.I. Pechnikov,E. S. Yakimov,M.I. Scheglov,I. V. Schemerov,A. N. Vasilev,A. I. Kochkova,A. V. Chernykh,A.V. Chikiryaka,P. N. Butenko,Stephen J. Pearton +12 more
TL;DR: In this paper , Ga2O3 layers with thickness from 10 to 86 µm were grown by halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates in a hot wall reactor at 570°C, with the growth rate of about 3-4μm/h.
Journal ArticleDOI
Two-Dimensional Hole Gas Formation at the Κ-Ga2o3 /Aln Heterojunction Interface
Alexander Y. Polyakov,V. I. Nikolaev,A. I. Pechnikov,Eugene B. Yakimov,S. kARPOV,Sergey Stepanov,A. Vasilev,A. Chernyk,A. Kuznetsov,In Hwan Lee,Stephen J. Pearton +10 more
Journal ArticleDOI
Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy
Eugene B. Yakimov,Alexander Y. Polyakov,V. I. Nikolaev,A. I. Pechnikov,M. P. Scheglov,Stephen J. Pearton +5 more
TL;DR: In this article , the structural and electrical properties of orthorhombic Ga2O3/AlN/Si structures were studied and the formation of two-dimensional hole layers in the Ga 2O3 was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of Ga 2 O3 and AlN.
Journal ArticleDOI
Tuning electrical properties in Ga2O3 polymorphs induced with ion beams
Alexander Y. Polyakov,А. I. Kochkova,Alexander Azarov,Vishnukanthan Venkatachalapathy,A. V. Miakonkikh,A. Vasilev,A. V. Chernykh,A. A. Romanov,Andrej Yu. Kuznetsov,Stephen J. Pearton +9 more
TL;DR: In this paper , two strategies for tuning the electron concentration in the ion beam created metastable κ-polymorph: adding silicon donors by ion implantation and adding hydrogen via plasma treatments.
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