Journal ArticleDOI
Structural and optical analyses of polycrystalline Zn1−xSbxSe thin films prepared by resistive heating technique
Rashad Rashid,Arshad Mahmood,U. Aziz,A. Shah,Zahid Ali,Q. Raza,Abdul Malik,Muhammad Asim Rasheed +7 more
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In this paper, the influence of Sb doping on the structural and optical properties of Zn 1− x Sb x Se (0,⩽, x ǫ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate was reported.About:
This article is published in Optical Materials.The article was published on 2016-01-01. It has received 6 citations till now. The article focuses on the topics: Raman spectroscopy & Texture (crystalline).read more
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Compositional optimization of binary Selenium-Antimony films for low-power electrical and optical storage
TL;DR: In this article, structural, electrical and optical properties of binary Selenium-Antimony (Sb-Se) films were investigated for low power and high speed NVRAM memories with low power.
Journal Article
Continuous-wave broadly tunable Cr2+:ZnSe laser
Gregory J. Wagner,Timothy J. Carrig,Ralph H. Page,Kathleen I. Schaffers,Jean-Oliver Ndap,X. Ma,Arnold Burger +6 more
TL;DR: In this article, the authors report room-temperature operation of an all-solid-state broadly tunable continuous-wave ZnSe laser with an absorbed power slope efficiency of 63% and continuous tunability from 2138 to 2760 nm.
Journal ArticleDOI
Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices
TL;DR: In this paper, the authors optimize the properties and microstructure of a GST material by introducing a BiSb phase, which decreases the amorphous resistance of GST and reduces the drift coefficient to 0.004.
Journal ArticleDOI
Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices
TL;DR: In this article , the authors optimize the properties and microstructure of a GST material by introducing a BiSb phase, which decreases the amorphous resistance of GST and reduces the drift coefficient to 0.004.
Journal ArticleDOI
Analysis of surface properties of Mg doped ZnS and ZnSe thin films through x-ray photoelectron spectroscopy
TL;DR: In this paper , the surface properties of spray-deposited Mg-doped ZnS and ZnSe films were investigated using X-ray photoelectron spectroscopy (XPS).
References
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Journal ArticleDOI
Effect of thermal annealing on the physical properties of Zn1−xCuxSe thin films deposited by close spaced sublimation technique
TL;DR: In this article, annealed thin films of ZnSe were grown on glass substrates by closed space sublimation technique and the annealing samples have been investigated through Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), spectroscopic ellipsometer, spectrophotometer and Raman Spectroscopy.
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Undoped and Sb-doped ZnSe-based II-VI superlattices grown by molecular beam epitaxy
TL;DR: In this paper, high resistivity and p-type ZnSe-based II-VI semiconductor superlattices were prepared by molecular beam epitaxy on GaAs or InP substrates.
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Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition
TL;DR: In this paper, the authors showed that Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of ∼ 1.1 × 1019 cm−3 and resistivities of ∼ 0.098
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Polycrystalline thin film ZnSexTe1-x: preparation and properties
TL;DR: ZnSexTe1-x films were prepared by co-evaporating ZnSe and ZnTe powders from a two-zone hot wall evaporation jig onto glass substrates.
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Net acceptor concentration in ZnSe:Sb grown from vapor phase
TL;DR: In this article, ZnSe:Sb bulk crystals were grown by a physical vapor transport technique and subsequently annealed under Se2 partial pressure, and they become p-type conducting with maximum net acceptor concentrations of (7±3)×1016 cm−3.