Journal ArticleDOI
Structural and optical analyses of polycrystalline Zn1−xSbxSe thin films prepared by resistive heating technique
Rashad Rashid,Arshad Mahmood,U. Aziz,A. Shah,Zahid Ali,Q. Raza,Abdul Malik,Muhammad Asim Rasheed +7 more
Reads0
Chats0
TLDR
In this paper, the influence of Sb doping on the structural and optical properties of Zn 1− x Sb x Se (0,⩽, x ǫ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate was reported.About:
This article is published in Optical Materials.The article was published on 2016-01-01. It has received 6 citations till now. The article focuses on the topics: Raman spectroscopy & Texture (crystalline).read more
Citations
More filters
Journal ArticleDOI
Compositional optimization of binary Selenium-Antimony films for low-power electrical and optical storage
TL;DR: In this article, structural, electrical and optical properties of binary Selenium-Antimony (Sb-Se) films were investigated for low power and high speed NVRAM memories with low power.
Journal Article
Continuous-wave broadly tunable Cr2+:ZnSe laser
Gregory J. Wagner,Timothy J. Carrig,Ralph H. Page,Kathleen I. Schaffers,Jean-Oliver Ndap,X. Ma,Arnold Burger +6 more
TL;DR: In this article, the authors report room-temperature operation of an all-solid-state broadly tunable continuous-wave ZnSe laser with an absorbed power slope efficiency of 63% and continuous tunability from 2138 to 2760 nm.
Journal ArticleDOI
Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices
TL;DR: In this paper, the authors optimize the properties and microstructure of a GST material by introducing a BiSb phase, which decreases the amorphous resistance of GST and reduces the drift coefficient to 0.004.
Journal ArticleDOI
Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices
TL;DR: In this article , the authors optimize the properties and microstructure of a GST material by introducing a BiSb phase, which decreases the amorphous resistance of GST and reduces the drift coefficient to 0.004.
Journal ArticleDOI
Analysis of surface properties of Mg doped ZnS and ZnSe thin films through x-ray photoelectron spectroscopy
TL;DR: In this paper , the surface properties of spray-deposited Mg-doped ZnS and ZnSe films were investigated using X-ray photoelectron spectroscopy (XPS).
References
More filters
Journal ArticleDOI
Spectroscopic ellipsometry (SE) studies on vacuum-evaporated ZnSe thin films
S. Venkatachalam,D. Soundararajan,P. Peranantham,D. Mangalaraj,Sa. K. Narayandass,S. Velumani,P.S. Schabes-Retchkiman +6 more
TL;DR: In this article, the composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford Backscattered Spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and I-V characteristics.
Journal ArticleDOI
Physical Properties of Silver Doped ZnSe Thin Films for Photovoltaic Applications
TL;DR: In this paper, closed space sublimation (CSS) technique was used to deposit pure (99.99%) zinc selenide(ZnSe) powder on to glass substrates for fabricating the ZnSe thin films.
Journal ArticleDOI
Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy
TL;DR: In this paper, Sb-doped ZnSe samples were deposited on the (001)GaAs substrate by metalorganic vapor-phase epitaxy (MOVPE), and spectral analysis of deep-level transient spectroscopy (SADLTS) was used to characterize deep levels of Sbdoped znSe.
Journal ArticleDOI
Deep hole trap levels of Sb-doped ZnSe grown by MOVPE
Toshiyuki Ido,Hideo Goto +1 more
TL;DR: In this article, the authors used deep-level transient spectroscopy (DLTS) to investigate sb-doped p-type ZnSe layers grown epitaxially on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE).
Journal ArticleDOI
Photoluminescence And Electron Paramagnetic Resonance Of Nitrogen-Doped Zinc Selenide Epilayers
TL;DR: In this paper, electron paramagnetic resonance (EPR) and photoluminescence (PL) studies were performed on a series of ZnSe samples grown by molecular beam epitaxy.