Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs
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TLDR
In this paper, the results of a transmission electron microscopy study of the Pd-GaAs reaction are presented, and the first two reaction products are ternary phases of the type M X A III B V (Pd 5 (GaAs) 2 and Pd 4 GaAs) by choosing appropriate metal thicknesses and annealing temperatures.About:
This article is published in Materials Letters.The article was published on 1985-07-01 and is currently open access. It has received 30 citations till now. The article focuses on the topics: Ternary operation.read more
Citations
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Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
TL;DR: In this article, the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C were investigated by applying high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry.
Journal ArticleDOI
Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
Eli Yablonovitch,Timothy D. Sands,D. M. Hwang,I. Schnitzer,T. J. Gmitter,S. K. Shastry,D. S. Hill,J. C. C. Fan +7 more
TL;DR: In this article, the authors proposed a new type of wafer bonding, which employs free standing III-V films as created by epitaxial liftoff and showed that the resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
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Phase equilibria in metal‐gallium‐arsenic systems: Thermodynamic considerations for metallization materials
TL;DR: In this article, a classification scheme for phase equilibria in elemental metal-gallium-arsenic systems is proposed, which assigns as many metals as possible to seven generic types of ternary phase diagrams.
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A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)
TL;DR: In this article, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated.
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Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases
TL;DR: In this paper, the solid-phase epitaxial regrowth of a III-V compound semiconductor by a two-stage reaction between two-layer metallization and a compound substrate is described.
References
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Journal ArticleDOI
Alloying reaction in thin nickel films deposited on GaAs
TL;DR: In this paper, the alloying reaction in a thin nickel film deposited on a GaAs substrate was investigated using microprobe Auger spectroscopy, reflection high energy electron diffraction and transmission electron diffusion.
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Contact reactions in Pd/GaAs junctions
TL;DR: In this paper, the solid-state reaction of thin Pd films with GaAs substrates has been investigated using Auger sputter profiling, x-ray diffraction, Heion backscattering, and sheet-resistivity measurements.
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Palladium on GaAs: A reactive interface
TL;DR: In this paper, the formation and properties of ≊15 nm films of Pd on GaAs(100) and (110) substrates as a function of annealing temperature were studied.
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Structural characterization of the interfacial reactions between palladium and gallium arsenide
Xian-Fu Zeng,D.D.L. Chung +1 more
TL;DR: In this paper, the process of compound formation at the interface between evaporated Pd thin films (∠1000 A thick) and GaAs single crystals was investigated in situ at temperatures from 25-550°C.
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Interfacial reactions of Ni‐Ta thin films on GaAs
A. Lahav,Moshe Eizenberg +1 more
TL;DR: In this paper, the interfacial reactions between Ta-Ni thin films and (100) GaAs substrate have been analyzed by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy.