scispace - formally typeset
Book ChapterDOI

Testing BSIM-IMG Model Quality

Reads0
Chats0
TLDR
In this paper, the authors rigorously test the BSIM-IMG model quality by performing several tests and conclude that the model performs reasonably well under different types of simulation environments.
Abstract
A compact model has to fulfill several criteria to qualify as an industry standard model. In addition to accurate modeling of the real device physics, it is equally important for a model to behave reasonably well under different types of simulation environment. In this chapter, we rigorously test the BSIM-IMG model quality by performing several tests.

read more

References
More filters
Journal ArticleDOI

Academic and industry research progress in germanium nanodevices

Ravi Pillarisetty
- 17 Nov 2011 - 
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Journal ArticleDOI

An analytical solution to a double-gate MOSFET with undoped body

TL;DR: In this paper, a 1D analytical solution for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation was derived, giving closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage.
Journal ArticleDOI

An improved MOSFET model for circuit simulation

TL;DR: A new MOSFET model is presented that overcomes the errors present in state-of-the-art models and comparison with measured data is presented to validate the new model.
Journal ArticleDOI

Germanium Based Field-Effect Transistors: Challenges and Opportunities

TL;DR: This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.
Journal ArticleDOI

Validation of MOSFET model Source–Drain Symmetry

TL;DR: In this paper, the authors present dc and ac tests that verify whether a MOSFET model is symmetric with respect to a source-drain reversal, and also verify the symmetry of gate and bulk currents.