Journal ArticleDOI
The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure
TLDR
In this paper, high-resolution x-ray photoelectron spectroscopy (XPS) was used to study the chemical nature and physical distribution of N in oxynitride films formed by rapid thermal N2O processes (RTPs).Abstract:
High‐resolution x‐ray photoelectron spectroscopy (XPS) was used to study the chemical nature and physical distribution of N in oxynitride films formed by rapid thermal N2O processes (RTPs). High‐resolution synchrotron Si 2p core level photoemission spectroscopy (PES) was used to study the oxide/Si(100) interface suboxide structures with and without the presence of N. XPS N 1s studies indicated that there are two types of N in the RTP oxynitride films. The chemical bond configuration of the first type of N is similar to that N in Si3N4 and is mainly distributed within the first 1 nm from the interface. The second type of N is distributed mainly outside of the first 1 nm region, and the N is likely bonded to two Si and one oxygen atom. PES studies showed that Si formed suboxides with oxygen at the interface for all oxynitride films. It is found that there is no change in the Si+1 structure while there is a dramatic intensity decrease in the Si+2 and Si+3 peaks with the inclusion of N in the oxide. Both the ...read more
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Journal ArticleDOI
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
Scaling the gate dielectric: materials, integration, and reliability
TL;DR: A review of the more "fundamental" concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented and a methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements.
Journal ArticleDOI
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Hei Wong,Hei Wong,Hiroshi Iwai +2 more
TL;DR: In this article, the authors reviewed several critical issues of MOS gate dielectrics in the nanometer range and suggested that the conventional oxide can be scaled down, in principle, to two atomic layers of about 7 A, but this is not practically feasible because of the non-scalabilities of interface, trap capture cross-section, leakage current, and the statistical parameters of fabrication processes.
Journal ArticleDOI
Growth and characterization of ultrathin nitrided silicon oxide films
TL;DR: It is shown that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilitates the processing of layered oxynitride nanostructures with desirable electrical properties.
Journal ArticleDOI
Atomic transport during growth of ultrathin dielectrics on silicon
TL;DR: In this article, an atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride films on Si is reviewed and the physico-chemical constitution of the involved surfaces and interfaces for each different dielectric material, as well as complementary studies of the gas, gas-surface, and solid phase chemistry.
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