Journal ArticleDOI
The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition
TLDR
In this article, the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaSbN/GaAs MQW structures was described.Abstract:
We describe the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaAsSb/GaAs(P) multiple quantum well (MQW) and InAsSb/InAsP and InAsSb/InPSb strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. We also describe the growth and initial characterization of GaAsSbN/GaAs MQW structures. By changing the layer thickness and composition of the InAsSb SLSs and MQWs, we have prepared structures with low temperature (<20 K) photoluminescence wavelengths ranging from 3.2 to 6.0μ m. We have made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP and InPSb SLS active regions. The lasers and LEDs utilize the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for electrons injected into the active regions. Cascaded, semi-metal, mid-infrared, injection lasers with pseudomorphic InAsSb multiple quantum well active region lasers and LEDs are reported. We also report on GaAsSb/GaAs(P) lasers and LEDs emitting at 1.1 to 1.2 μm grown on GaAs substrates and using AlGaAs layers for confinement.read more
Citations
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Proceedings ArticleDOI
Quantum dot intermediate band solar cell material systems with negligible valence band offsets
TL;DR: In this article, material triads (quantum dot/barrier/substrate) are presented that may implement quantum dot intermediate band solar cells with conversion efficiencies greater than 60%.
Journal ArticleDOI
InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers
Jeremy Kirch,T. Garrod,Sangho Kim,J. H. Park,J.C. Shin,Luke J. Mawst,Thomas F. Kuech,Xueyan Song,Susan E. Babcock,Igor Vurgaftman,Jerry R. Meyer,Tung-Sheng Kuan +11 more
TL;DR: In this article, the defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements.
Journal ArticleDOI
Properties of narrow-bandgap (0.3–0.48 eV) A 3 B 5 solid solution epilayers grown by metal-organic chemical vapor deposition
TL;DR: In this article, the process of epitaxial growth of narrowbandgap (with bandgap value Eg ≈ 0.3−0.48 eV) solid solutions GaInAsSb and InAsPSb on InAs substrates by metal-organic chemical vapor deposition at low pressure (76 Torr) was investigated.
Journal ArticleDOI
A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD
Peinan Ni,Jinchao Tong,Landobasa Y. M. Tobing,Zhengji Xu,Shupeng Qiu,Xiaohong Tang,Dao Hua Zhang +6 more
TL;DR: In this paper, a simple thermal treatment method for direct growth of InAsSb films on GaAs (001) substrates for the first time was reported, which demonstrated the capabilities of the grown InAs Sb films for room temperature MIR optoelectronic application.
Journal ArticleDOI
Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures
Jannik Lehr,Lukas Hellweg,C. Fuchs,Saleh Firoozabadi,P. Kükelhan,Andreas Beyer,Kerstin Volz,Wolfgang Stolz +7 more
TL;DR: In this paper , the influence of growth interruptions on the interface morphology and the nitrogen incorporation efficiency have been studied in GaAs-substrate and double quantum well structures have been characterized by high resolution x-ray diffraction, scanning transmission electron microscopy and photoluminescence spectroscopy.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
TL;DR: In this paper, the design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga, sub 0.93}As, sub 1.0 ev bandgap, lattice matched to GaAs was described, and hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm.
Journal ArticleDOI
High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature
Jérôme Faist,Federico Capasso,Carlo Sirtori,Deborah L. Sivco,James N. Baillargeon,Albert L. Hutchinson,S. N. G. Chu,Alfred Y. Cho +7 more
TL;DR: In this paper, the high power operation of mid-infrared quantum cascade lasers at temperatures up to T =320 K was reported, where a molecular beam epitaxy grown InP top cladding layer was also used to optimize heat dissipation.
Journal ArticleDOI
Bowing parameter of the band-gap energy of GaNxAs1−x
TL;DR: In this article, the authors reported a study of nitrogen incorporation in GaAs using a N rf plasma source and showed that the N composition can be increased by lowering the growth temperature.
Journal ArticleDOI
Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um
Kent D. Choquette,John F. Klem,Arthur J. Fischer,O. Blum,A. A. Allerman,I. J. Fritz,Steven R. Kurtz,William G. Breiland,R. M. Sieg,Kent M. Geib,J.W. Scott,R.L. Naone +11 more
TL;DR: In this article, the authors used two n-type As/GaAs distributed Bragg reflectors with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region.