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Journal ArticleDOI

The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

TLDR
In this article, the role of molybdenum oxide (MoO3) and MoO3 doped N,N′-di(naphthalene-1-yl) and N, N′-diphenyl-benzidine (NPB) as interface modification layer on ITO in improvement of the efficiency and stability of organic light-emitting diodes (OLEDs) is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (U
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This article is published in Organic Electronics.The article was published on 2008-12-01. It has received 150 citations till now. The article focuses on the topics: Photoemission spectroscopy & Organic electronics.

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Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

TL;DR: An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is given, and various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing.
Journal ArticleDOI

Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

TL;DR: In this paper, the electron affinity and ionization energy of vacuum-deposited molybdenum trioxide (MoO3) and of a typical MoO3/hole transport material (HTM) interface were determined via ultraviolet and inverse photoelectron spectroscopy.
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P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

TL;DR: In this article, a study on p-doping of organic wide band gap materials with Molybdenum trioxide using current transport measurements, ultraviolet photo-electron spectroscopy and inverse photo electrophoresis was presented.
Journal ArticleDOI

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

TL;DR: Greiner et al. as mentioned in this paper provided a rational guide to process engineers in selecting the best suitable electrode/oxide structures for a targeted applications, which can be used as a buffer layer to modify the electrode work function.
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The influence of hydrogenation and oxygen vacancies on molybdenum oxides work function and gap states for application in organic optoelectronics.

TL;DR: This work aims to investigate the beneficial role of hydrogenation (the incorporation of hydrogen within the oxide lattice) versus oxygen vacancy formation in tuning the electronic structure of molybdenum oxides while maintaining their high work function.
References
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Journal ArticleDOI

Organic electroluminescent devices with improved stability

TL;DR: In this article, a stable organic electroluminescent devices based on vapor-deposited Alq thin films have been achieved, which are derived from several factors including: (1) a multilayer thin-film structure with a CuPc stabilized hole-injection contact, (2) a hole-transport diamine layer using a naphthyl substituted benzidine derivative, and (3) an ac drive wave form.
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Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode

TL;DR: In this article, an ultrathin LiF layer adjacent to an electron-transporting layer and an aluminum outerlayer was used as an electrode for organic electroluminescent devices.
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Degradation Mechanism of Small Molecule-Based Organic Light-Emitting Devices

TL;DR: Results show that cationic AlQ3 species are unstable and that their degradation products are fluorescence quenchers, explaining the success of different approaches to stabilizing OLEDs, such as doping of the hole transport layer, introducing a buffer layer at the hole-injecting contact, and using mixed emitting layers of hole and electron transporting molecules.
Journal ArticleDOI

Dependence of indium–tin–oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies

TL;DR: In this article, the effect of the method used to clean indium-tin-oxide (ITO) on its work function was investigated by ultraviolet photoemission spectroscopy (UPS) and x-ray photo-emission spectrum analysis (X-ray PSA) and it was shown that C-containing contaminants, O/In ratio, and In/Sn ratio on the ITO surface affect the work function.
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