Journal ArticleDOI
Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization
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TLDR
A thermoelectric characterization of samples of bismuth telluride of both n - and p -type is carried out, as a function of stoichiometric deviation as mentioned in this paper.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1988-01-01. It has received 273 citations till now. The article focuses on the topics: Bismuth telluride & Thermoelectric effect.read more
Citations
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Journal ArticleDOI
Photocurrent generation with two-dimensional van der Waals semiconductors.
Michele Buscema,Joshua O. Island,Dirk J. Groenendijk,Sofya I. Blanter,Gary A. Steele,Herre S. J. van der Zant,Andres Castellanos-Gomez +6 more
TL;DR: The state-of-the-art in photodetectors based on semiconducting 2D materials are reviewed, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
Journal ArticleDOI
Large and Tunable Photothermoelectric Effect in Single-Layer MoS2
Michele Buscema,Maria Barkelid,Val Zwiller,Herre S. J. van der Zant,Gary A. Steele,Andres Castellanos-Gomez +5 more
TL;DR: A large and tunable Seebeck coefficient of the single-layer MoS(2) paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.
Large and Tunable Photothermoelectric Effect in Single-Layer MoS 2
Michele Buscema,Maria Barkelid,Val Zwiller,Herre S. J. van der Zant,Gary A. Steele,Andres Castellanos-Gomez +5 more
TL;DR: In this article, the photoresponse of single-layer MoS2 field effect transistors was studied by scanning photocurrent microscopy and it was shown that the photothermoelectric effect is dominant over the separation of photoexcited electron−hole pairs across the Schottky barriers at the MoS 2/electrode interfaces.
Journal ArticleDOI
The Thermoelectric Properties of Bismuth Telluride
Ian T. Witting,Thomas C. Chasapis,Francesco Ricci,Matthew Peters,Nicholas A. Heinz,Geoffroy Hautier,G. Jeffrey Snyder +6 more
TL;DR: In this paper, the authors identify and quantify the key material properties that make Bi2Te3 such a good thermoelectric material, which can be used for benchmarking future improvements in Bi2TE3 or new replacement materials.
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New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials
TL;DR: It is presented a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis.
References
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Journal ArticleDOI
Electrical and Thermal Properties of Bi 2 Te 3
C. B. Satterthwaite,R. W. Ure +1 more
TL;DR: In this article, the phase diagram in the region about the cleavage planes was clarified and the lattice conductivity was attributed to transport of energy by ambipolar diffusion of electrons and holes.
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Compound tellurides and their alloys for peltier cooling—A review
TL;DR: In this paper, the thermoelectric properties of cooling materials suitable for use near room temperature have been reviewed, including the Seebeck coefficient, thermal conductivity, and figure of merit as a function of electrical resistivity.
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Mobility of Electrons and Holes in PbS, PbSe, and PbTe between Room Temperature and 4.2°K
TL;DR: Hall coefficient and resistivity measurements have been made on 29 single crystals (mostly synthetic) of PbS, PbSe, and PbTe between room temperature and 4.2\ifmmode^\circ\else\textdegree\fi{}K as mentioned in this paper.