Journal ArticleDOI
Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.
A. V. Buyanov,A. C. Ferreira,E Söderström,Irina Buyanova,Per-Olof Holtz,Bo E. Sernelius,Bo Monemar,Mani Sundaram,K. L. Campman,James L. Merz,Arthur C. Gossard +10 more
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This article is published in Physical Review B.The article was published on 1996-01-15. It has received 10 citations till now. The article focuses on the topics: Variable-range hopping.read more
Citations
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Journal ArticleDOI
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
TL;DR: In this article, the authors implemented metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone.
Journal Article
Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
TL;DR: In this article, the authors implemented metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone.
A Investigation of the Hall Effect in Impurity Hopping Conduction.
TL;DR: In this article, a 1.7×10 −13 (Ω,cm) −1 superieur was established for the conductivite de Hall dans les conditions de l'experience.
Journal ArticleDOI
Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition
Jurgis Kundrotas,Aurimas Čerškus,Gintaras Valušis,M. Lachab,Suraj P. Khanna,Paul Harrison,Edmund H. Linfield +6 more
TL;DR: In this paper, the authors studied the photoluminescence spectra of beryllium δ-doped GaAs∕AlAs multiple quantum wells over a range of doping concentrations.
Journal ArticleDOI
Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well
Shun-Tsung Lo,Kuang Yao Chen,Yi Chun Su,Chi-Te Liang,Yuan Huei Chang,Gil-Ho Kim,J. Y. Wu,Sheng-Di Lin +7 more
TL;DR: In this article, the authors performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well and showed that with increasing temperature T, a crossover from NMR to PMR can be observed, which corresponds to a transition from variable range hopping regime to activated electron transport.
References
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Journal ArticleDOI
Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
TL;DR: In this paper, it was shown that the conductance of disordered electronic systems depends on their length scale in a universal manner, and asymptotic forms for the scaling function were obtained for both two-dimensional and three-dimensional systems.
Journal ArticleDOI
Weak localization in thin films: a time-of-flight experiment with conduction electrons
TL;DR: In this paper, the physics of weak localization is discussed and the experimental results as well as the theory is reviewed, and the role of spin-orbit scattering and the magnetic scattering are discussed.
Journal ArticleDOI
Magnetoresistance and Hall effect in a disordered two-dimensional electron gas
TL;DR: In this paper, a weak magnetic field is found to have strong effects on the previously predicted logarithmic rise in resistivity at low temperatures, which is a strong indicator of disorder in two dimensions.
Journal ArticleDOI
Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band
TL;DR: La conduction a temperature ambiante est due au saut (du second plus proche voisin) active, dans une bande de defaut profond de concentration 3×10 19 cm −3 , d'energie E c -0,75 eV.
Book ChapterDOI
Applications of Quantum Semiconductor Structures
Claude Weisbuch,Borge Vinter +1 more
TL;DR: In this article, the authors discuss the applications of quantum semiconductor structures and propose a new heterostructure type of FET, which includes the two-dimensional electron gas field effect transistor, also called high electron mobility transistor, modulation doped FET or selectively doped heterojunction transistor depending on manufacturer.