Journal ArticleDOI
Threshold switching and phase transition numerical models for phase change memory simulations
TLDR
In this article, a comprehensive numerical model for chalcogenide glasses is presented, coupling a physically based electrical model able to reproduce the threshold switching with a local nucleation and growth algorithm to account for the phase transition dynamics.Abstract:
A comprehensive numerical model for chalcogenide glasses is presented, coupling a physically based electrical model able to reproduce the threshold switching with a local nucleation and growth algorithm to account for the phase transition dynamics. The main ingredients of the chalcogenide physics are reviewed and analyzed through simplified analytical models, providing a deeper insight on the origin of the threshold switching mechanism in chalcogenide glasses. A semiconductorlike three-dimensional full-coupled numerical implementation of the proposed model is finally presented and its capabilities to quantitatively reproduce the key elements of the Ge2Sb2Te5 chalcogenide physics are demonstrated in the framework of phase change memory device simulations.read more
Citations
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An optoelectronic framework enabled by low-dimensional phase-change films
TL;DR: Using extremely thin phase-change materials and transparent conductors, electrically induced stable colour changes in both reflective and semi-transparent modes are demonstrated and a pixelated approach can be used in displays on both rigid and flexible films.
Journal ArticleDOI
Design Rules for Phase‐Change Materials in Data Storage Applications
TL;DR: It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates, providing a design rule for phase-change materials.
Journal ArticleDOI
Phase change materials and phase change memory
TL;DR: The advantages and challenges of PCM are described, the physical properties of phase change materials that enable data storage aredescribed, and the current knowledge of the phase change processes is summarized.
Journal ArticleDOI
Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry
TL;DR: Differential scanning calorimetry (DSC) is widely used to study the stability of amorphous solids, characterizing the kinetics of crystallization close to the glass-transition temperature Tg as discussed by the authors.
Journal ArticleDOI
Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior
TL;DR: A more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary conditions is provided to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.
References
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Journal ArticleDOI
Kinetics of Phase Change. I General Theory
TL;DR: In this paper, the theory of phase change is developed with the experimentally supported assumptions that the new phase is nucleated by germ nuclei which already exist in the old phase, and whose number can be altered by previous treatment.
Book
Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
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Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
TL;DR: In this article, a relation between the actual transformed volume V and a related extended volume V1 ex is derived upon statistical considerations, and a rough approximation to this relation is shown to lead, under the proper conditions, to the empirical formula of Austin and Rickett.
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Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III
TL;DR: In this paper, a comprehensive description of the phenomena of phase change may be summarized in Phase Change, Grain Number and Microstructure Formulas or Diagrams, giving, respectively, the transformed volume, grain, and microstructure densities as a function of time, temperature, and other variables.
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Percolation and Conduction
TL;DR: In this article, an extension of percolation theory to treat transport is described, and a general expression for the conductance of such networks is derived, which relates to the spin-stiffness coefficient of dilute ferromagnet.