Journal ArticleDOI
Thulium/holmium-doped fiber laser passively mode locked by black phosphorus nanoplatelets-based saturable absorber.
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TLDR
This work suggests that the BP NPs-based SA is potentially useful for ultrashort, pulsed laser operations in the eye-safe region of 2 μm, and phenomena of multi-pulsing operations, including harmonic mode-locked states and soliton bunches, were obtained in the experiment.Abstract:
By coupling black phosphorus (BP) nanoplatelets (NPs) with a fiber-taper evanescent light field, a saturable absorber (SA) based on the BP NPs has been successfully fabricated and used in a thulium/holmium-doped fiber laser as the mode locker. The SA had a modulation depth of ∼9.8% measured at 1.93 μm. A stable mode-locking operation at 1898 nm was achieved with a pulse width of 1.58 ps and a fundamental mode-lock repetition rate of 19.2 MHz. By increasing the pump intensity, phenomena of multi-pulsing operations, including harmonic mode-locked states and soliton bunches, were obtained in the experiment, showing that the BP NPs possess an ultrafast optical response time. This work suggests that the BP NPs-based SA is potentially useful for ultrashort, pulsed laser operations in the eye-safe region of 2 μm.read more
Citations
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Journal ArticleDOI
Recent progress of study on optical solitons in fiber lasers
TL;DR: A detailed overview of the experimentally verified optical solitons in fiber lasers can be found in this article, where an outlook for the development on the soliton in fiber laser is provided and discussed.
Journal ArticleDOI
2D Black Phosphorus Saturable Absorbers for Ultrafast Photonics
Journal ArticleDOI
Black phosphorus quantum dots: synthesis, properties, functionalized modification and applications.
TL;DR: This review systematically summarizes PBQDs for the first time and helps facilitate the further development of layered nanostructures-derived QDs and other low-dimensional nanomaterials.
Journal ArticleDOI
Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers.
J. Du,J. Du,J. Du,M. Zhang,Zhinan Guo,Jingyi Chen,Xuekun Zhu,Guoqing Hu,Peng Peng,Zheng Zheng,Han Zhang +10 more
TL;DR: By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band.
Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
References
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Journal ArticleDOI
Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
Journal ArticleDOI
Phosphorene: A New 2D Material with High Carrier Mobility
TL;DR: In this article, a few-layer phosphorene has been introduced as a 2D p-type material for electronic applications, which has an inherent, direct and appreciable band gap that depends on the number of layers.
Phosphorene: An Unexplored 2D Semiconductor with a High Hole
TL;DR: The found phosphorene to be stable and to have an inherent, direct, and appreciable band gap, which depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV.
Journal ArticleDOI
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
TL;DR: In this paper, the authors reported that the band structure of few-layer black phosphorous is anisotropic and the band gap increases with the decrease in number of staking layers.