Journal ArticleDOI
Transient electron transport in wurtzite GaN, InN, and AlN
TLDR
In this paper, the authors compared the acceleration and velocity overshoot in wurtzite GaN, InN, and AlN compared with that which occurs in GaAs.Abstract:
Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are examined and compared with that which occurs in GaAs. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 4 kV/cm for the case of GaAs but much higher for the III–nitride semiconductors: 140 kV/cm for GaN, 65 kV/cm for InN, and 450 kV/cm for AlN. We find that InN exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaN and AlN. Finally, using a one-dimensional energy–momentum balance approach, a simple model is used to estimate the cutoff frequency performance of nitride based heterojunction field effect transistors (HFETs) and a comparison is made to recently fabricated AlGaN/GaN HFETs.read more
Citations
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Journal ArticleDOI
Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
Ru-Zhi Wang,Wei Zhao,Hui Yan +2 more
TL;DR: In this article, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Journal ArticleDOI
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
TL;DR: In this article, the effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy (MBE) is studied, and it is shown that using an N buffer layer can significantly improve the structural and electrical properties of InNs.
Journal ArticleDOI
Low ballistic mobility in submicron HEMTs
TL;DR: In this paper, the field effect mobility at room temperature in 0.15-/spl mu/m gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm/sup 2/V-s.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Book
Advances in Electronics and Electron Physics
L. Marton,R. L. Sproull +1 more
TL;DR: In this paper, the authors describe the use of the Kerre basis algorithm in mathematical morphology, R. Jones and I.D. Svalbe mirror-bank energy analyzers, S.P. Cahay and S.A. Bandyopadhyay fuzzy relations and applications, B. de Baets and E.S.
Journal ArticleDOI
The preparation and properties of vapor- deposited single-crystalline GaN
H. P. Maruska,J. J. Tietjen +1 more
TL;DR: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc as mentioned in this paper, were tested for testing the properties of single crystals.
Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.