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Transition between electron localisation and antilocalisation in graphene
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TLDR
It is shown that quantum interference in graphene can result in antilocalization of charge carriers--an increase of the conductance, which is detected by a negative magnetoconductance, due to weak electron-phonon scattering.Abstract:
The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons which results in electron localisation and therefore a decrease of the conductance. In graphene, where the charge carriers are chiral and have an additional (Berry) phase of \pi, the quantum interference is expected to lead to anti-localisation: an increase of the conductance accompanied by negative magnetoconductance (a decrease of conductance in magnetic field). Here we observe such negative magnetoconductance which is a direct consequence of the chirality of electrons in graphene. We show that graphene is a unique two-dimensional material in that, depending on experimental conditions, it can demonstrate both localisation and anti-localisation effects. We also show that quantum interference in graphene can survive at unusually high temperatures, up to T~200 K.read more
Citations
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Electronic transport in two-dimensional graphene
TL;DR: In this paper, a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures is provided.
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Electron-Electron Interactions in Graphene: Current Status and Perspectives
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TL;DR: In this article, an emerging Dirac liquid of Lorentz invariant quasi-particles in the weak coupling regime and strongly correlated electronic states in the strong coupling regime is discussed.
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Colloquium: The transport properties of graphene: An introduction
TL;DR: In this paper, an introduction to the transport properties of graphene combining experimental results and theoretical analysis is presented, where simple intuitive models are used to illustrate important points on the transport property of graphene.
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The electronic properties of bilayer graphene.
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Experimental Review of Graphene
Daniel R. Cooper,Benjamin D'Anjou,Nageswara R. Ghattamaneni,Benjamin Harack,Michael Hilke,Alexandre Horth,Norberto Majlis,Mathieu Massicotte,Leron Vandsburger,Eric Whiteway,Victor Yu +10 more
TL;DR: In this paper, the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene from an experimental perspective.
References
More filters
Journal ArticleDOI
Electronic transport in two-dimensional graphene
TL;DR: In this paper, a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures is provided.
Journal ArticleDOI
Electron-Electron Interactions in Graphene: Current Status and Perspectives
Valeri N. Kotov,Bruno Uchoa,Vitor M. Pereira,Francisco Guinea,A. H. Castro Neto,A. H. Castro Neto +5 more
TL;DR: In this article, an emerging Dirac liquid of Lorentz invariant quasi-particles in the weak coupling regime and strongly correlated electronic states in the strong coupling regime is discussed.
Journal ArticleDOI
Colloquium: The transport properties of graphene: An introduction
TL;DR: In this paper, an introduction to the transport properties of graphene combining experimental results and theoretical analysis is presented, where simple intuitive models are used to illustrate important points on the transport property of graphene.
Journal ArticleDOI
Tunable metal-insulator transition in double-layer graphene heterostructures
Leonid Ponomarenko,Andre K. Geim,Andrey A. Zhukov,Rashid Jalil,Sergey V. Morozov,Kostya S. Novoselov,Irina V. Grigorieva,E. H. Hill,Vadim Cheianov,Vladimir I. Fal'ko,Kenji Watanabe,Takashi Taniguchi,Roman V. Gorbachev +12 more
TL;DR: In this paper, the authors reported a strong Anderson localization and the corresponding metal-insulator transition in ultra-high-quality graphene, where the transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically.
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