Journal ArticleDOI
Tunable VO2 relaxation oscillators for analog applications
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This article is published in Semiconductor Science and Technology.The article was published on 2019-09-23. It has received 11 citations till now. The article focuses on the topics: Relaxation oscillator.read more
Citations
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Journal ArticleDOI
Coupled oscillations of VO2-based layered structures: Experiment and simulation approach
TL;DR: In this paper, two VO2-based layered structures are capacitively coupled resulting in emerging self-sustaining oscillations up to 1'MHz by adjusting the series resistance and the supplied voltage.
Journal ArticleDOI
Dynamics of voltage-driven oscillating insulator-metal transitions
Yin Shi,Amy Duwel,Dennis M. Callahan,Yifei Sun,F. Anika Hong,Hari Padmanabhan,Venkatraman Gopalan,Roman Engel-Herbert,Shriram Ramanathan,Long Qing Chen +9 more
TL;DR: In this paper, a physics-based nonequilibrium model was developed to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validated it using a prototype.
Journal ArticleDOI
Polarized Raman scattering in micrometer-sized crystals of triclinic vanadium dioxide
TL;DR: In this article, the authors used polarized micro-Raman spectroscopy to determine the orientation of a triclinic vanadium dioxide VO2 (T) cell with a high degree of precision.
Journal ArticleDOI
Intrinsic Insulator-Metal Phase Oscillations
Yinqiu Shi,Longmei Chen +1 more
TL;DR: In this article , an experimentally validated physical phase-field description of the insulator-metal transition was used to demonstrate an intrinsic non-capacitive insulator metal phase oscillation in a prototypical strongly correlated material near room temperature.
Journal ArticleDOI
Equilibrium analysis of Mott memristor reveals criterion for negative differential resistance
TL;DR: In this article, it was shown that S-shaped NDR (also called current-controlled NDR) arises only above a critical ratio, Mc, of insulator to metal resistivity.
References
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Journal ArticleDOI
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
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The two components of the crystallographic transition in VO2
TL;DR: In this article, two distinguishable mechanisms of the monoclinic-to-tetragonal transition in VO 2 are identified: an antiferroelectric-toparaelectric transition at a temperature T t as well as a change from homopolar to metallic VV bonding at T t.
Journal ArticleDOI
Metal-insulator transition in vanadium dioxide
A. Zylbersztejn,N. F. Mott +1 more
TL;DR: In this paper, the basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material, and the major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidenced by studies of the magnetic properties of alloys, is further demonstrated from an analysis of their electrical properties.
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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
TL;DR: In this paper, the authors discuss the role of materials synthesis in influencing functional properties and discuss future research directions that may be worth consideration, concluding with a brief discussion on future directions that are worth consideration.
Journal ArticleDOI
The metal-insulator transitions of VO2: A band theoretical approach
TL;DR: In this paper, the first principles electronic structure calculations for the metallic rutile and the insulating monoclinic phase of vanadium dioxide were presented, and the density functional calculations allowed for a consistent understanding of all three phases.