Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
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Journal ArticleDOI
Impact ionization coefficients of electrons and holes in
TL;DR: The arsenic composition depends on electron and hole ionization coefficients, α and β, in this article, where α is the electron ionization coefficient and β is the hole ionisation coefficient.
Journal ArticleDOI
Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InP
TL;DR: In this paper, high purity GaxIn1-x As has been grown lattice matched on B InP by liquid phase epitaxy, and the room temperature mobility is shown to be significantly higher than GaAs over a wide range of net electron concentrations useful for device applications.
Journal ArticleDOI
The electron velocity-field characteristic for n-In 0.53 Ga 0.47 As at 300 K
TL;DR: The electron velocity-field characteristic for n-type In 0.53 Ga 0.47 As exhibits a larger negative differential mobility and a lower high field velocity than is obtained with GaAs as discussed by the authors.
Book ChapterDOI
Noise in Solid State Devices
A. van der Ziel,E.R. Chenette +1 more
TL;DR: In this paper, the authors present a survey of noise in solid-state devices, including thermal noise, shot noise, generation-recombination (g-r) noise, and flicker noise.
Design and Characteristics of InGaAsDnP Composite-Channel HFET' s
TL;DR: In this paper, a design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as het- erostructure field effect transistors is presented for the first time.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
Journal ArticleDOI
Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
Journal ArticleDOI
Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Alloy scattering in ternary III-V compounds
J. W. Harrison,J. R. Hauser +1 more
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Journal ArticleDOI
High-field transport in wide-band-gap semiconductors
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.