Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
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Journal ArticleDOI
High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate
TL;DR: In this article, the InGaAs junction field effect transistors (JFETs) are fabricated in metalorganic chemical-vapor-deposition (MOCVD)-grown n-InGaAs and semi-insulating Fe:InP layers on n/sup +/-InP substrate with a P/Be co-implanted p/sup +/ self-aligned gate.
Journal ArticleDOI
Compound semiconductors for low-noise microwave MESFET applications
J.M. Golio,Robert J. Trew +1 more
TL;DR: In this article, the low-noise potential of microwave MESFET's fabricated from materials other than GaAs was determined using a one-dimensional FET model, where material parameters and device geometry were derived from Monte Carlo calculations.
Journal ArticleDOI
InGaAs enhancement-mode MISFETs using double-layer gate insulator
TL;DR: In this article, the authors describe the fabrication of enhancement-mode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator.
Journal ArticleDOI
Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFETs
TL;DR: In this article, a gradual channel device model was developed to simulate the temperature dependent behavior and assist in the interpretation of the characteristics of MODFETs, and the simulations were shown to provide good predictive ability and confirm the physical reasons why the zero temperature coefficient point of a modulated field effect transistor occurs only for gate bias voltages below the threshold voltage.
Journal ArticleDOI
Theoretical investigation of n + -n-n + Ga 0.47 In 0.53 As TEO's up to the millimeter-wave range
TL;DR: Theoretical investigations of n+-n-n+Ga 0.47 In 0.53 As TED's have been performed up to the millimeter-wave range as discussed by the authors, where the accumulation layer transit time mode of oscillation has been pointed out up to about 50 GHz.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
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Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
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Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Alloy scattering in ternary III-V compounds
J. W. Harrison,J. R. Hauser +1 more
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Journal ArticleDOI
High-field transport in wide-band-gap semiconductors
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.