Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
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Journal ArticleDOI
Electron concentration dependence of Hall factor in In0.53Ga0.47As
Y. Takeda,M. A. Littlejohn +1 more
TL;DR: In this paper, the Hall factor in In0.53Ga0.47As is calculated as a function of electron concentration between 1×1014 cm−3 and 1 ×1019 cm −3 at 300 K with carrier compensation ratios (ND+NA )/n = 1,2,5, and 10.
Journal ArticleDOI
Electroreflectance of In0.79Ga0.21As0.54P0.46
TL;DR: In this paper, the Schottky-barrier electroreflectance spectra of an In0.79Ga0.21As0.54P0.46 LPE layer at 81 K were measured and the interband reduced mass of the quaternary alloy together with the values of the band gap and spin-orbit splitting were determined.
Journal ArticleDOI
Hot electron and magneto-transport properties of In1−xGaxP1−yAsy liquid phase epitaxial films☆
TL;DR: In this article, the authors measured the dependence of the electron velocity on electric field in four samples of In1−xGaxP1−yAsy at 77 and 300 K. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 1016 cm−3.
Journal ArticleDOI
Calculations of the intrinsically higher temperature stability of electronic devices made from quaternary alloys
TL;DR: In this article, it was suggested that electronic devices made from quaternary alloys in which the carrier velocity is strongly influenced by alloy scattering will have an intrinsically higher temperature stability.
Journal ArticleDOI
Effects of two longitudinal optical‐phonon modes on electron distribution in GaxIn1−xAsyP1−y
TL;DR: In this paper, a two-LO phonon model was employed for the electron distribution and drift mobility calculations in GaInAsP quaternary alloys, which is known to have two or three longitudinal optical (LO)phonon modes.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
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Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
Journal ArticleDOI
Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Alloy scattering in ternary III-V compounds
J. W. Harrison,J. R. Hauser +1 more
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Journal ArticleDOI
High-field transport in wide-band-gap semiconductors
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.