Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
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Journal ArticleDOI
Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
TL;DR: In this paper, single and coupled δ-doped InP channel heterostructure field-effect transistors using high barrier height (>0.73 eV) and wide energy band gap (∼1.8 eV), In0.34Al0.66As0.85Sb0.15 Schottky layer and InP channels have been successfully grown by low-pressure metalorganic chemical vapor deposition.
Journal ArticleDOI
On the performance analysis and design of an integrated front-end PIN/HBT photoreceiver
Nikhil Ranjan Das,M.J. Deen +1 more
TL;DR: In this article, the performance analysis and optimum design of an integrated front-end PIN/HBT photoreceiver for fiber-optic communication is presented, where the authors consider the transit-time effect of a PIN photodetector on the overall receiver circuit analysis.
Journal ArticleDOI
Characteristics of an In 0.53 Ga 0.47 As very shallow junction gate structure grown by molecular beam epitaxy
TL;DR: In this article, the authors demonstrate an In 0.53 Ga 0.47 As very shallow (80 ∼ 700 A) junction gate structure grown by molecular beam epitaxy (MBE), which allows the fabrication of submicron devices with simple processing steps.
Journal ArticleDOI
On a simplified analysis of the carrier contribution to elastic constants of ternary and quaternary compounds
Kamakhya P. Ghatak,M. Mondal +1 more
TL;DR: In this paper, the carrier contribution to the elastic constants of degenerate ternary and quaternary compounds on the basis of a newly derived electron dispersion law taking into account the presence of band tails was investigated.
Journal ArticleDOI
Studies on the prospects of GaInAs and GaInAsP for double-drift region heterostructure IMPATTs
G. N. Dash,S. P. Pati +1 more
TL;DR: In this article, an accurate and realistic computer simulation program has been framed and used for the dc and high-frequency analysis of the double-drift region (DDR) IMPATT diodes.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
Journal ArticleDOI
Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
Journal ArticleDOI
Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Alloy scattering in ternary III-V compounds
J. W. Harrison,J. R. Hauser +1 more
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Journal ArticleDOI
High-field transport in wide-band-gap semiconductors
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.