Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
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A simple theoretical analysis of the thermo-electric power in quantum dots of nonparabolic semiconductors in the presence of a parallel magnetic field
Kamakhya P. Ghatak,B. R. Nag +1 more
TL;DR: In this article, an attempt is made to study the thermoelectric power in quantum dots of non-parabolic semiconductors in the presence of a parallel magnetic field on the basis of a new electron dispersion law.
Journal ArticleDOI
Simple theory of the density-of-states function in heavily doped non-linear optical and optoelectronic materials
TL;DR: In this article, the dispersion relation of conduction electrons and the corresponding density-of-state (DOS) function in heavily doped non-linear optical, tetragonal, III-V, ternary and quaternary materials forming band tails were studied.
Journal ArticleDOI
The effect of InP buffer layer on the electron transport properties of epitaxial In1−xGaxAs
T. Dosluoglu,R. Solanki +1 more
TL;DR: Carrier concentration and mobility of undoped InGaAs layers grown on InP via organometallic vapor phase epitaxy have been investigated in this paper, where the mobility limits imposed by various scattering mechanisms were studied over the temperature range 40 to 300 K.
Journal ArticleDOI
Transferred-electron effect in In0.53Ga0.47As
W. Kowalsky,A. Schlachetzki +1 more
TL;DR: In this paper, the transferred-electron effect in In0.53Ga0.47As was demonstrated by observation for the first time in the travelling-domain mode, and the peak velocity was determined as (2.2 ± 0.3) × 107 cm/s.
Journal ArticleDOI
Stabilization of BeZnO alloy by S incorporation: A density functional theory investigation
Mingming Chen,Dingyu Yong,Chunxia Wu,Zhen Shen,Anqi Chen,Yuan Zhu,Bicai Pan,Zikang Tang,Zikang Tang +8 more
TL;DR: In this paper, the authors proposed an effective method, called complementary in bond lengths, through which the local bond length deviation in BeZnO alloy system could be greatly reduced by introducing chemical bonds with opposite misfits.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
Journal ArticleDOI
Electron drift velocity in silicon
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
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Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Alloy scattering in ternary III-V compounds
J. W. Harrison,J. R. Hauser +1 more
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Journal ArticleDOI
High-field transport in wide-band-gap semiconductors
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.