Journal ArticleDOI
Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys
TLDR
In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.Abstract:
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.read more
Citations
More filters
Journal ArticleDOI
Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering
TL;DR: In this article, Monte Carlo calculations of velocity-field characteristics for GaAs using the recent experimental conduction-band ordering of Aspnes, which places the Lc6(111) conduction−band minima lower in energy than the Xc6 (100) minima.
Journal ArticleDOI
Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
TL;DR: In this article, a technique is described for the estimation of the influence of random potential alloy scattering on the high field transport properties of quaternary III-V semiconductors obtained by Monte Carlo simulation.
Journal ArticleDOI
Energy bandgap and lattice constant contours of iii–v quaternary alloys
TL;DR: In this paper, the energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb.
Journal ArticleDOI
Band-to-band Auger recombination effect on InGaAsP laser threshold
TL;DR: In this paper, the band-to-band Auger recombination effect on the threshold current in an InGaAsP laser is studied theoretically and an approximation method for the calculation is derived and the Auger lifetime is obtained numerically in the framework of the k-p perturbation method for band structure calculation.
Journal ArticleDOI
Ga 0.47 In 0.53 As: A ternary semiconductor for photodetector applications
TL;DR: In this article, the physical properties related to the crystal growth and carrier transport are discussed in terms of both the design and the operating characteristics of detectors fabricated from this ternary alloy.
References
More filters
Journal ArticleDOI
Pulsed room‐temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)
TL;DR: In this article, the performance of LPE In1−xGaxP1−zAsz double heterojunction (DH) laser diodes at short wavelength is described (Jth ≥ 2×104 A/cm2, λ∼6470 A, heterobarrier ΔE∼137 meV).
Journal ArticleDOI
High‐quantum‐efficiency photoemission from an InGaAsP photocathode
TL;DR: In this article, an improved InGaAsP quaternary III-V material was developed for near-ir photocathode applications, achieving a quantum efficiency of 9.0% per incident photon at 1.06 μm from a 1.15 eV band-gap sample at room temperature.
Journal ArticleDOI
Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity
TL;DR: In this paper, a 1−xGaxP1−zAsz double heterojunctions (77°K, yellow) were shown to exhibit either homogeneous or inhomogeneous line broadening when operated as lasers in an external grating cavity.
Journal ArticleDOI
Solution of the Boltzmann equation in ellipsoidal valleys with application to the valleys of GaAs and gaP
K Fletcher,P N Butcher +1 more
TL;DR: In this article, a method of calculation previously used in spherically symmetric valleys is extended to ellipsoidal valleys by expanding the perturbed distribution function as a series of spherical harmonics.