Journal ArticleDOI
Voltage difference engineering in SOI MOSFETs: A novel side gate device with improved electrical performance
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TLDR
In this article, the authors studied the impact of voltage difference engineering in a silicon-on-insulator metal oxide semiconductor field effect transistor (SOI-MOSFET) and compared the performance to that of a conventional C-SOI.About:
This article is published in Materials Science in Semiconductor Processing.The article was published on 2013-12-01. It has received 7 citations till now. The article focuses on the topics: Drain-induced barrier lowering & Reverse short-channel effect.read more
Citations
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Journal ArticleDOI
Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL
TL;DR: In this article, an inspiring ultra-thin box silicon-on-insulator (UTBB SOI) MOSFET with enhanced immunity to drain-induced barrier lowering (DIBL) is analyzed.
Journal ArticleDOI
High performance multi-channel MOSFET on InGaAs for RF amplifiers
TL;DR: In this article, a multi-channel MOSFET (MC-MOS-FET) was proposed for RF amplifier applications, which has two vertical gates placed in trenches creating multiple channels in p-body for parallel conduction of drain current.
Journal ArticleDOI
Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon–nitride buried insulator
TL;DR: In this article, a dual material buried insulator vertical trapezoidal doping SOI MOSFET (DV-SOI) was proposed to reduce the self-heating effect.
Journal ArticleDOI
Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate
TL;DR: In this article, the authors presented two silicon-on-insulator tunnel field effect transistors (SOI-TFETs), referred as a lateral dual-gate and a lateral triple-gate TFET, which consist of one or two vertical thin vertical dielectric layers within the original front-gate region.
Proceedings ArticleDOI
Investigation of a nanoscale grooved stepped gate MOSFET to explore the self-heating effect
TL;DR: In this article, a new grooved gate silicon-on-insulator (GG-SOI) MOSFET with multi-layered (SiO 2 /Si 3 N 4 /Si O 2 ) buried insulator structure was proposed to reduce self-heating effect (SHE).
References
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Journal ArticleDOI
Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
TL;DR: In this article, a 2D analytical model for the surface potential variation along the channel in fully depleted dual-material gate silicon-on-insulator MOSFETs is developed to investigate the short-channel effects (SCEs).
Journal ArticleDOI
Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
Keunwoo Kim,Jerry G. Fossum +1 more
TL;DR: In this article, numerical device-simulation results, supplemented by analytical characterizations, are presented to argue that asymmetrical double-gate (DG) CMOS, utilizing n/sup +/ and p/sup+/ polysilicon gates, can be superior to symmetrical-gate counterparts for several reasons, only one of which is its previously noted thresholdvoltage control.
Book
Physics of semiconductor devices
TL;DR: In this article, the PN junction diode and MOS transistor are discussed. And the Bipolar Transistor and Bipolar transistor have been shown to have similar properties.
Journal ArticleDOI
A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs
TL;DR: In this paper, a novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated, which does not enlarge the device size and is fully compatible with SOI CMOS technology.
Related Papers (5)
Simulated Threshold Voltage Adjustment and Drain Current Enhancement in Novel Striped-Gate Nondoped-Channel Fully Depleted SOI-MOSFETs
A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain
Ali A. Orouji,M. Jagadesh Kumar +1 more
A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects
Zeinab Ramezani,Ali A. Orouji +1 more