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Journal ArticleDOI

Zero bias anomaly in tunnel resistance and electron—electron interaction

B.L. Altshuler, +1 more
- 01 Apr 1979 - 
- Vol. 88, Iss: 3, pp 1033-1035
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TLDR
In this article, the mean free path of electrons is more or comparable with its wave length, i.e. some higher the localization edge, and it is shown that the electron-electron interaction in this situation leads to an anomaly in the density of states near the Fermi level.
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This article is published in Solid State Communications.The article was published on 1979-04-01. It has received 330 citations till now. The article focuses on the topics: Anomaly (physics) & Tunnel effect.

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Ultracold atomic gases in optical lattices: mimicking condensed matter physics and beyond

TL;DR: In this article, the authors review recent developments in the physics of ultracold atomic and molecular gases in optical lattices and show how these systems may be employed as quantum simulators to answer some challenging open questions of condensed matter, and even high energy physics.
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Localization: theory and experiment

TL;DR: The transport properties of disordered solids have been the subject of much work since at least the 1950s, but with a new burst of activity during the 1980s which has survived up to the present day as mentioned in this paper.
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Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.

TL;DR: In this paper, a cross sectional TEM view of several graphene and boron nitride heterostructures is presented, showing that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean.
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The Anderson-Mott transition

TL;DR: In this paper, the interacting disordered electron problem is reviewed with emphasis on the quantum phase transitions that occur in a model system and on the field-theoretic methods used to describe them.
References
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Conductance peaks produced by kondo scattering from O2 in M-I-M tunnel junctions

TL;DR: In this article, Kondo scattering from paramagnetic molecular oxygen trapped at the metal-insulator interface has been studied in Al-I-Au tunnel junctions and it has been shown that peaks centered about zero-bias in the dynamic conductance of the tunnel junction are due to kondo scattering.
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