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Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods.
To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
We show that this extra term is essential for the operation of transistors.
The obtained results demonstrate a potential of this technique for development of the next-generation high-power transistors.
It is shown that high electron mobilities and low off currents characterise the transistors fabricated with these techniques.
This work demonstrates a new way of engineering ultrasmall transistors and provides the incentive and guide for experimental exploration.
These results exhibit the promising potential of our transistors in artificial intelligence and healthcare systems.