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Amnon Yariv
Researcher at California Institute of Technology
Publications - 1084
Citations - 56928
Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.
Papers
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Journal ArticleDOI
A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser
Joseph Katz,Nadav Bar-Chaim,P. C. Chen,Shlomo Margalit,Israel Ury,D. Wilt,M. Yust,Amnon Yariv +7 more
TL;DR: In this paper, a GaAlAs double-heterostructure laser was integrated with a heterojunction bipolar transistor on a GaAs substrate by means of a mutually compatible structure formed by Be ion implantation.
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Excitation, Relaxation, and Continuous Maser Action in the 2.613-Micron Transition of CaF2:U3+
TL;DR: In this paper, an investigation of the 2.613 micron fluorescence of trivalent uranium in CaF2 (CaF2:U3+) and the operation of a continuous solid-state maser using this transition is described.
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Theoretical study on dispersion compensation in air-core Bragg fibers
TL;DR: The waveguide dispersion for the m = 1 mode in an air-core Bragg fiber is studied and it is shown it is possible to achieve very large negative dispersion values with significantly reduced absorption loss and non-linear effects.
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Monolithic integration of an injection laser and a metal semiconductor field effect transistor
TL;DR: In this paper, a new laser structure, the ''T''laser'' was monolithically integrated with a MESFET on a semi-insulating GaAs substrate, achieving direct modulation of the laser by means of the transistor.
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Self-stabilized nonlinear lateral modes of broad area lasers
TL;DR: In this paper, the authors derived approximate analytical solutions for traveling wave fields within the broad area laser, where the field amplitude consists of a small ripple superimposed on a large dc value, and the matching fields at the boundary determined the modulation depth and imparts an overall phase curvature to the traveling wave mode.