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Amnon Yariv
Researcher at California Institute of Technology
Publications - 1084
Citations - 56928
Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.
Papers
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Journal ArticleDOI
Intermodal stability of a coupled-cavity semiconductor laser
R. Lang,Amnon Yariv +1 more
TL;DR: In this article, the steady-state operation of a two-element coupled-cavity laser near a mode hop is analyzed and the equations of motion for the two cavities and two relevant modes are reduced to a system of nondimensional nonlinear ordinary differential equations.
On the coupling coefficients in the "coupled-mode" theory
TL;DR: In this paper, the authors considered the small coupling case, where the loss-free field solutions are used instead of the actual solutions in the presence of losses, and formulated a type of perturbation theory formulated on physical grounds.
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Coupled parallel waveguide semiconductor laser
TL;DR: In this article, the operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated One of the cavities (‘‘control’’ cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser.
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Experimental studies of phase conjugation with depleted pumps in photorefractive media.
TL;DR: The experimental measurement of phase-conjugate reflectivity versus various ratios of input-beam intensities in photorefractive barium titanate and strontium barium niobate crystals is described and the theoretical prediction from the coupled-wave theory is compared.
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Graded collector heterojunction bipolar transistor
TL;DR: In this paper, a graded collector heterojunction bipolar transistor is proposed to improve device speed performance at high current densities by reducing the influence of the Kirk effect, which improves the performance of the transistors.