scispace - formally typeset
A

Amnon Yariv

Researcher at California Institute of Technology

Publications -  1084
Citations -  56928

Amnon Yariv is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 103, co-authored 1082 publications receiving 55256 citations. Previous affiliations of Amnon Yariv include University of California, Santa Barbara & Watkins-Johnson Company.

Papers
More filters
Journal ArticleDOI

Single-carrier-type dominated impact ionisation in multilayer structures

TL;DR: In this paper, a new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed, where electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers.
Journal ArticleDOI

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

TL;DR: In this article, low threshold current was obtained for InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy, and the best device showed 0.9 mA threshold current (L=225 µm).
Journal ArticleDOI

Low-threshold two-dimensional annular Bragg lasers

TL;DR: Lasing at telecommunication wavelengths from annular resonators employing radial Bragg reflectors is demonstrated at room temperature under pulsed optical pumping, and the electromagnetic field is shown to be guided by the defect.
Journal ArticleDOI

Large optical cavity AlGaAs buried heterostructure window lasers

TL;DR: In this article, a large optical cavity buried heterostructure window laser with only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors has been fabricated.
Journal ArticleDOI

Finite-difference time-domain analysis of spontaneous emission in a microdisk cavity

TL;DR: In this article, the authors developed a general algorithm to calculate the spontaneous emission rate and spontaneous emission factor in a microcavity of arbitrary geometry, where both the emission spectrum of the light source and the decay of the electromagnetic modes are taken into account in their model.