Mobility engineering and metal-insulator transition in monolayer MoS2
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Citations
Black phosphorus field-effect transistors
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2D transition metal dichalcogenides
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
References
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
Atomically thin MoS2: a new direct-gap semiconductor
Two-dimensional atomic crystals
Emerging Photoluminescence in Monolayer MoS2
Related Papers (5)
Frequently Asked Questions (12)
Q2. What is the simplest way to write ea?
Assuming that activated behavior arises from activation of electrons from the Fermi energy EF to conduction band edge Ec, the authors can write Ea = Ec-EF.
Q3. What is the name of the paper?
The source, drain and voltage probes were defined by electron-beam lithography followed by deposition of 90 nm thick Au electrodes.
Q4. What is the hysteresis of the device?
The authors extract device capacitance from Hall effect measurements and the transverse Hall resistance Rxy for all MoS2 devices covered with a dielectric layer in order to accurately determine the mobility.
Q5. How high is the Ea of the top-gated device?
From the deviation of the Ea from the linear trend, occurring when barrier tunneling becomes the dominant mechanism for charge carrier injection, the authors estimate a Schottky barrier height ΦSB ∼ 45meV.
Q6. How does the hysteresis of conductance G affect the MIT?
From the deviation of the Ea from the linear trend, occurring when barrier tunneling becomes the dominant mechanism for charge carrier injection, the authors estimate a Schottky barrier height for the charge carrier injection from gold electrodes into monolayer MoS2 of ΦSB∼ 45 meV.S5.
Q7. What is the charge density of the back gate?
El ectro nco ncen tratio nn (101 3cm -2)1098765Back gate voltage Vbg (V)Cbg-Hall = 6.88 · 10 -7 F/cm2 Cbg-geometric = 0.13 · 10 -7 F/cm2Cbg-Hall / Cbg-geometric = 531.11.00.90.80.7El ectro nco ncen tratio nn (101 3 cm -2)8075706560Back gate voltage Vbg (V)Cbg-Hall = 3.4 · 10 -8 F/cm-2 Cbg-geometric = 1..26 · 10 -8 F/C·cm-2Cbg-Hall / Cbg-geometric = 2.4NATURE MATERIALS | www.nature.com/naturematerials
Q8. How was the transport of the devices performed?
All devices are wirebonded onto chip carriers and transferred to a cryostat where the transport measurements were performed in vacuum from room temperature down to 300 mK.
Q9. How much is the charge density increased by the parallel-plate capacitance?
The capacitance is increased by a factor of 53 with respect to the parallel-plate capacitance where one plate is the back-gate and the other the MoS2 channel.a b 3.02.52.01.51.0
Q10. What is the inverse slope of Rxy vs magnetic field?
From the inverse slope of Rxy vs magnetic field (an example is shown on figure 5a in the main manuscript), the authors can directly determine the electron density n2D in the MoS2 channel.
Q11. What is the hysteresis of the conductance G curve?
The variation of the electron density extracted from Rxy as a function of the control-gate voltage for two typical situations encountered in the literature is shown in Figure S4.
Q12. How many nts are in the eff?
From the slope of the curve (main text, solid black line in Figure 4b) related to monolayer device in Figure 4b at lower gate voltages when the device is fully depleted, that corresponds to a bandwidth of 44 meV, the authors estimate the concentration of depleted charges to be nt ~ 6.3 · 1011 cm-2.