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Angshuman Nag

Researcher at Indian Institute of Science

Publications -  121
Citations -  10980

Angshuman Nag is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Perovskite (structure) & Photoluminescence. The author has an hindex of 46, co-authored 109 publications receiving 7863 citations. Previous affiliations of Angshuman Nag include Indian Institute of Science Education and Research, Pune & Jawaharlal Nehru Centre for Advanced Scientific Research.

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Colloidal CsPbBr3 Perovskite Nanocrystals: Luminescence beyond Traditional Quantum Dots.

TL;DR: This work highlights the advantages in both ensemble and single-nanocrystal PL of colloidal CsPbBr3 nanocrystals (NCs) over the traditional cQDs and investigates batch-to-batch reproducibility of NCs exhibiting PL peaks within ±1 nm.
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Graphene analogues of BN: novel synthesis and properties.

TL;DR: It is found that the mechanical stability of BN with respect to out-of-plane deformation is quite different from that of graphene, as evident in the dispersion of their flexural modes.
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Metal-free Inorganic Ligands for Colloidal Nanocrystals: S2–, HS–, Se2–, HSe–, Te2–, HTe–, TeS32–, OH–, and NH2– as Surface Ligands

TL;DR: It is shown that the key aspects of Pearson's hard and soft acids and bases (HSAB) principle can be applied to the bonding of molecular species to the nanocrystal surface and facilitated the charge transport between individual nanocrystals.
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State of the Art and Prospects for Halide Perovskite Nanocrystals.

Amrita Dey, +78 more
- 27 Jul 2021 - 
TL;DR: A comprehensive review of metal-halide perovskite nanocrystals can be found in this article, where researchers having expertise in different fields (chemistry, physics, and device engineering) have joined together to provide a state-of-the-art overview and future prospects of metalhalide nanocrystal research.
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Terahertz Conductivity within Colloidal CsPbBr3 Perovskite Nanocrystals: Remarkably High Carrier Mobilities and Large Diffusion Lengths

TL;DR: These results confirm a negligible influence of surface defects in trapping charge carriers, which in turn results into desirable intrinsic transport properties, from the perspective of device applications, such as remarkably high carrier mobility, large diffusion length, and high luminescence quantum yield.