Review on thermal energy storage with phase change: materials, heat transfer analysis and applications

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

A review of Ga2O3 materials, processing, and devices

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Small, light weight and multifunctional electronic components are attracting much attention because of the rapid growth of the wireless communication systems and microwave products in the consumer electronic market. The component manufacturers are thus forced to search for new advanced integration, packaging and interconnection technologies. One solution is the low temperature cofired ceramic (LTCC) technology enabling fabrication of three-dimensional ceramic modules with low dielectric loss and embedded silver electrodes. During the past 15 years, a large number of new dielectric LTCCs for high frequency applications have been developed. About 1000 papers were published and ∼500 patents were filed in the area of LTCC and related technologies. However, the data of these several very useful materials are scattered. The main purpose of this review is to bring the data and science of these materials together, which will be of immense help to researchers and technologists all over the world. The comme...

Low loss dielectric materials for LTCC applications: a review

It is well established that the power dissipation for electronic components is increasing. At the same time, high performance portable equipment with volume, weight, and power limitations are gaining widespread acceptance in the marketplace. The combination of the above conditions requires thermal solutions that are high performance and yet small, light, and power efficient. This paper explores the possibility of using thermoelectric (TE) refrigeration as an integrated solution for portable electronic equipment accounting for heat sink and interface material thermal resistances. The current study shows that TE refrigeration can indeed have a benefit over using just a heat sink. Performance maps illustrating where TE refrigeration offers an advantage over an air-cooled heat sink are created for a parametric range of CPU heat flows, heat sink thermal resistances, and TE material properties. During the course of the study, it was found that setting the TE operating current based on minimizing the CPU temperature (Tj ), as opposed to maximizing the amount of heat pumping, significantly reduces Tj . For the baseline case studied, a reduction of 20–30°C was demonstrated over a range of CPU heat dissipation. The parametric studies also illustrate that management of the heat sink thermal resistance appears to be more critical than the CPU/TE interfacial thermal resistance. However, setting the TE current based on a minimum Tj as opposed to maximum heat pumping reduces the system sensitivity to the heat sink thermal resistance.Copyright © 2003 by ASME

Chip Level Refrigeration of Portable Electronic Equipment Using Thermoelectric Devices

Etude analytique et experimentale du transfert de chaleur par ebullition dans l'eau sur une paire de plaques plates, a flux thermiques egaux. Resultats experimentaux pour la temperature de la paroi en fonction de la localisation axiale du flux thermique et de l'espacement des plaques. Modele theorique du debit liquide a travers le canal et correlation de la vitesse du transfert de chaleur des parois du canal

Thermosyphon Boiling in Vertical Channels

While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power amplifiers.

Near-junction microfluidic thermal management of RF power amplifiers

Least-energy optimization of air-cooled heat sinks for sustainability-theory, geometry and material selection

The inherent advantages of forced air cooling have led to the widespread use of fully and partially shrouded heat sinks for the thermal management of high power microprocessors. The superior thermal performance that is achievable in the fully shrouded configuration is accompanied by a significant pressure drop penalty. The concept introduced in the current study, employs a thin sheet-metal "heat shield," placed around a partially shrouded heat sink, to channel the flow directly into the heat sink. A combined numerical and experimental study has shown that the use of this "heat shield" can substantially enhance heat sink thermal performance, in a channel geometry and airflow range typical of commercial chip packages; making it comparable to that of a fully shrouded heat sink, with a substantially lower pressure drop (∼50%). In addition, this thermal enhancement device can be easily retrofitted into existing systems; improving performance without major channel and/or fan modifications.

Avram Bar-Cohen

Papers

Chip Level Refrigeration of Portable Electronic Equipment Using Thermoelectric Devices

Thermosyphon Boiling in Vertical Channels

Near-junction microfluidic thermal management of RF power amplifiers

Least-energy optimization of air-cooled heat sinks for sustainability-theory, geometry and material selection

“Heat Shield”—An Enhancement Device for an Unshrouded, Forced Convection Heat Sink