D
D. Bensahel
Researcher at STMicroelectronics
Publications - 29
Citations - 593
D. Bensahel is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Silicon on insulator & Silicon. The author has an hindex of 13, co-authored 29 publications receiving 586 citations.
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Journal ArticleDOI
Engineering strained silicon on insulator wafers with the Smart CutTM technology
Bruno Ghyselen,J.M. Hartmann,Thomas Ernst,Cecile Aulnette,Benedite Osternaud,Y. Bogumilowicz,Alexandra Abbadie,Pascal Besson,Olivier Rayssac,A. Tiberj,Nicolas Daval,I. Cayrefourq,Frank Fournel,Hubert Moriceau,C. Di Nardo,Francois Andrieu,Vincent Paillard,M. Cabié,Laetitia Vincent,Etienne Snoeck,Fuccio Cristiano,Fuccio Cristiano,André Rocher,Anne Ponchet,Alain Claverie,Philippe Boucaud,M. N. Séméria,D. Bensahel,N. Kernevez,Carlos Mazure +29 more
TL;DR: In this paper, two approaches based on the Smart CutTM technology are considered in order to obtain good quality tensile-strained silicon on insulator wafers, which are used to demonstrate through miscellaneous structural results.
Journal ArticleDOI
Enhanced photoluminescence of heavily n-doped germanium
M. El Kurdi,Thierry Kociniewski,T.-P. Ngo,J. Boulmer,Dominique Débarre,Philippe Boucaud,Jean-Francois Damlencourt,Olivier Kermarrec,D. Bensahel +8 more
TL;DR: In this article, a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n-doped by gas immersion laser doping.
Journal ArticleDOI
Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)
A. Gouyé,Olivier Kermarrec,Aomar Halimaoui,Yves Campidelli,Denis Rouchon,M. Burdin,P. Holliger,D. Bensahel +7 more
TL;DR: In this paper, a low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si 3 H 8 ) has been investigated for Si homo-epitaxial growth.
Journal ArticleDOI
The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?
Benjamin Vincent,J.-F. Damlencourt,Yves Morand,A. Pouydebasque,C. Le Royer,Laurent Clavelier,N. Dechoux,P. Rivallin,Tuan Nguyen,Sorin Cristoloveanu,Yves Campidelli,D. Rouchon,M. Mermoux,Simon Deleonibus,D. Bensahel,T. Billon +15 more
TL;DR: In this article, a general study on the germanium condensation technique to assess its potential, issues and applications for advanced metal oxide semiconductor field effect transistor (MOSFET) technologies is presented.
Proceedings ArticleDOI
Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS
D. Aime,Benoit Froment,Florian Cacho,V. Carron,S. Descombes,Yves Morand,N. Emonet,Francois Wacquant,T. Farjot,S. Jullian,C. Laviron,Marc Juhel,R. Pantel,R. Molins,D. Delille,Aomar Halimaoui,D. Bensahel,Abdelkader Souifi +17 more
TL;DR: In this paper, defectivity data on dual gate oxide are presented, in correlation with the activation annealing impact and back end of line (BEOL) thermal stress effects as well as thorough TEM observations.