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Daniel P. Sanders

Researcher at IBM

Publications -  136
Citations -  6290

Daniel P. Sanders is an academic researcher from IBM. The author has contributed to research in topics: Photoresist & Photolithography. The author has an hindex of 36, co-authored 133 publications receiving 5922 citations. Previous affiliations of Daniel P. Sanders include Case Western Reserve University & California Institute of Technology.

Papers
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Patent

Graded topcoat materials for immersion lithography

Robert D. Allen, +3 more
TL;DR: In this paper, a topcoating material for immersion lithography is described, which includes a mixture of a first polymer and a second polymer, and the first and second polymers, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the top-coat layer.
Journal ArticleDOI

Pattern placement accuracy in block copolymer directed self-assembly based on chemical epitaxy.

Gregory S. Doerk, +8 more
- 22 Jan 2013 - 
TL;DR: Measurements of DSA placement error for lamellar block copolymer domains indexed to specific lines in the surface chemical prepattern for spatial frequency tripling and quadrupling are reported.
Journal ArticleDOI

Integration of Directed Self-Assembly with 193 nm Lithography

Daniel P. Sanders, +9 more
- 22 Jun 2010 - 
TL;DR: In this paper, the authors integrate DSA with state-of-the-art optical lithography in a straightforward and process-friendly manner, and discuss several integration strategies which allow 193 nm immersion lithography to produce suitable topographical and chemical guiding patterns for DSA.
Patent

Graded Spin-on Organic Antireflective Coating for Photolithography

Colin J. Brodsky, +8 more
TL;DR: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided in this article, which is useful for providing a single-layer composite graded antirelective covering.
Patent

Method of forming sub-lithographic structure utilizing polymer directional self-organization

Joy Cheng, +13 more
TL;DR: In this article, a block copolymer self-organization is used to create holes in a regular or an optional arrangement starting from an opening (inside one or a plurality of substrates) having a targeted CD (critical dimension).