D
Deirdre L. Olynick
Researcher at Lawrence Berkeley National Laboratory
Publications - 99
Citations - 3470
Deirdre L. Olynick is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 28, co-authored 99 publications receiving 3304 citations. Previous affiliations of Deirdre L. Olynick include University of California, Los Angeles & University of California.
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Journal ArticleDOI
Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.
Xiaogan Liang,Yeon Sik Jung,Shiwei Wu,Ariel Ismach,Deirdre L. Olynick,Stefano Cabrini,Jeffrey Bokor,Jeffrey Bokor +7 more
TL;DR: Graphene field-effect transistors made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature, which could be employed to construct future electronic devices based on graphene superlattices.
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Nanoscale molecular-switch devices fabricated by imprint lithography
Yong Chen,Douglas A. A. Ohlberg,Xuema Li,Duncan Stewart,R. Stanley Williams,Jan O. Jeppesen,Jan O. Jeppesen,Kent A. Nielsen,Kent A. Nielsen,J. Fraser Stoddart,Deirdre L. Olynick,Erik H. Anderson +11 more
TL;DR: In this article, a single molecular monolayer of bistable rotaxanes sandwiched between two 40-nm metal electrodes was fabricated using imprint lithography, and it was observed that it has high on-off ratios and reversible switching properties.
Journal ArticleDOI
Vapor-phase self-assembled monolayer for improved mold release in nanoimprint lithography
Gun Young Jung,Zhiyong Li,Wei Wu,Yong Chen,Deirdre L. Olynick,Shih-Yuan Wang,William M. Tong,†,‖ and,R. Stanley Williams +7 more
TL;DR: This work compared the atomic force microscopy, ellipsometry, reflection-absorption infrared spectroscopy, and contact angle results collected from substrates treated by two different application processes and found that the vapor-phase process was superior.
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One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography
Wei Wu,Gun Young Jung,Deirdre L. Olynick,Joseph Straznicky,Zhiyong Li,Xuema Li,Douglas A. A. Ohlberg,Yong Chen,S.Y. Wang,James Alexander Liddle,William M. Tong,R. Stanley Williams +11 more
TL;DR: In this paper, a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a double-layer spin-on resist, metal lift off and Langmuir-Blodgett film deposition was developed.
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Investigation of phonon coherence and backscattering using silicon nanomeshes
Jaeho Lee,Woochul Lee,Woochul Lee,Geoff Wehmeyer,Scott Dhuey,Deirdre L. Olynick,Stefano Cabrini,Chris Dames,Jeffrey J. Urban,Peidong Yang +9 more
TL;DR: Phonon coherence is unimportant for thermal transport in silicon nanomeshes with periodicities of 100 nm and higher and temperatures above 14 K, and phonon backscattering, as manifested in the classical size effect, is responsible for the thermal conductivity reduction.