Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

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High-κ gate dielectrics: Current status and materials properties considerations

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

Phase-change materials for rewriteable data storage

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

/pdf/superconducting-interfaces-between-insulating-oxides-21qkm7ai8t.pdf

Superconducting Interfaces Between Insulating Oxides

Raman spectroscopy is a standard characterization technique for any carbon system. Here we review the Raman spectra of amorphous, nanostructured, diamond-like carbon and nanodiamond. We show how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen. The measured spectra change with varying excitation energy. By visible and ultraviolet excitation measurements, the G peak dispersion can be derived and correlated with key parameters, such as density, sp(3) content, elastic constants and chemical composition. We then discuss the assignment of the peaks at 1150 and 1480 cm(-1) often observed in nanodiamond. We review the resonant Raman, isotope substitution and annealing experiments, which lead to the assignment of these peaks to trans-polyacetylene.

Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond

Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites

A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

High power RF window deposition apparatus, method, and device

Plasma Deposition of HfO2 and TiO2 onto Plasma-Nitrided Ge Surfaces

In the conventional high-temperature thermal oxidation and rapid thermal oxidation processes used to fabricate commercial SiO2/Si structures at ∼850–1050°C, the SiO2/Si interface and the bulk oxide are formed at the same time We have developed a low-temperature process for the formation of SiO2/Si structures at 200–300°C that separately controls and optimizes the properties of the SiO2/Si interface and the bulk SiO2 This has been accomplished by separating interface formation by plasma-associated oxidation from bulk oxide plasma-assisted deposition The oxidation step (i) removes residual C contamination from the Si surface, (ii) prevents N incorporation at the interface from the O atom source gas N2O and (iii) forms an oxide layer ∼06 nm thick and an SiO2/Si interface with a trap density, Dit ≈(1–4) × 1010 cm−2 eV−1 This type of process has also been extended to the deposition of multilayer oxide–nitride–oxide dielectrics

Low‐temperature plasma‐assisted processes for fabrication of SiO2/Si heterostructures

We present experimental evidence for reversible metastable alloy atom configurations in amorphous silicon. In a-Si:F we identify reversible transitions between samples with SiFSi bridging configurations and samples containing only conventional silicon-fluorine bonding structures.

Gerald Lucovsky

Papers

Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites

High power RF window deposition apparatus, method, and device

Plasma Deposition of HfO2 and TiO2 onto Plasma-Nitrided Ge Surfaces

Low‐temperature plasma‐assisted processes for fabrication of SiO2/Si heterostructures

Reversible metastable configurations in amorphous silicon