G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Self-Organization and the Physics of Glassy Networks
TL;DR: In this paper, a topological theory of the glass-forming tendency was proposed, which showed that all slowly quenched glasses are the result of the combined effects of a few simple mechanisms.
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Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
TL;DR: In this article, the structural dependence of breakdown characteristics and electrical degradation in ultrathin oxide/nitride (O/N) dielectrics, prepared by remote plasma enhanced chemical vapor deposition, was investigated under constant voltage stress.
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Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices
Choel-hwyi Bae,Gerald Lucovsky +1 more
TL;DR: In this paper, the authors applied remote plasma processing techniques, such as remote plasma assisted oxidation (nitridation) RPAO(N) and RP enhanced chemical vapor deposition (RPECVD), for fabrication of Si MOS devices with deposited SiO2, Si3N4 and Si oxynitride alloys.
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Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces
A. P. Young,J. Schäfer,G. H. Jessen,R. Bandhu,Leonard J. Brillson,Gerald Lucovsky,Hiro Niimi +6 more
TL;DR: In this article, the authors observed cathodoluminescence in ultrahigh vacuum over a broad spectral range (0.7-4.0 eV) from ultrathin 5 nm layers of remote plasma enhanced chemical vapor deposition grown a-SiO2:H deposited on silicon substrates.
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O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy
TL;DR: In this article, the O-vacancy electronic structure is addressed using a theoretical approach extended from multiplet theory traditionally applied to occupied intrinsic, and alloy and impurity atom d states in transition metal oxides.