G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Proceedings ArticleDOI
Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon
TL;DR: In this paper, the authors used the contactless electromodulation technique of photoreflectance (PR) to investigate the strain in the near surface region (-100 R) of Si in thermally prepared Si/Si02 interfaces.
Proceedings ArticleDOI
Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS
TL;DR: In this article, a novel application of synchrotron soft-X-ray spectroscopy is applied to the detection of intrinsic bonding defects, and partially occupied TM and REL atom valence band edge dand d- and f-states.
Journal ArticleDOI
Why SiN x :H is the Preferred Gate Dielectric for Amorphous Si Thin Film Transistors (TFTS) and SiO 2 is the Preferred Gate Dielectric for Polycrystalline Si TFT s
TL;DR: In this paper, the authors extended the constraint theory for thin films and single crystalline Si (C-Si) dielectric interfaces to a-Si:H and polycrystalline-Si (polySi) interfaces in TFTs where it provides guidelines for device optimization.
Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys
Gerald Lucovsky,Jinwoo Kim +1 more
TL;DR: In this paper, ligand field splittings for defect state features were extracted from O and TM core level spectroscopic transitions, which can then be compared with those obtained from O core spectroscopy and indicating different levels of partially ionic bonding.
Journal ArticleDOI
A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials
TL;DR: In this paper, the dependence of the total energy on the bond-angle at the twofold coordinated O- and S-atom sites, and the infrared effective charges of the normal mode network vibrations associated with symmetry determined asymmetric bond-stretching, symmetric bond stretching, bending and out-of-plane bond rocking displacements, including decomposition of effective charges in equilibrium distribution, and dynamic charge redistribution components are determined.