Gerald Lucovsky

TL;DR: In this paper, the authors discuss the design and operation of two UHV-compatible multichamber systems, one for one-inch wafers and a second for three-each wafer, each of which provides: i) substrate introduction via a load-lock chamber ii) surface preparation by a plasma-assisted surface cleaning process iii) thin film deposition of semiconductors and dielectrics by remote plasma enhanced chemical vapor deposition (remote PECVD) iv) surface analysis by Auger electron spectroscopy (AES) and either reflection high energy or low

TL;DR: In this article, a-Si(H) should be renamed nano-grain (ng)-Si, since some of the more important properties, e.g., doping and forming p-n junctions are a consequence of the nano-grained character.

TL;DR: In this paper, the authors demonstrate that low levels of electrically active defects in gate dielectrics for TFTs in liquid crystal displays (LCDs), and aggressively-scaled metal oxide-semiconductor field effect transistors (MOSFETs) are derived from similar network self-organizations that occur for a narrow range of dielectric compositions.

TL;DR: In this paper, it was shown that the density of defects in over-constrained and under-strained non-crystalline networks is proportional to N av - 2.4 and 3.0, respectively.

TL;DR: In this paper, electron spin resonance (ESR) studies on bulk-quenched, noncrystalline (nc-) silica glasses (henceforth, nc-SiO2) have distinguished between pre-existing process-induced defects introduced either after growth or annealing at high temperatures and (2) x-ray or γ-ray radiation or energetic electron particle-created defects.